STC03DE170

Overview

The STC03DE170 is a hybrid Emitter Switched Bipolar Transistor (ESBT) manufactured by STMicroelectronics. It integrates high-voltage bipolar and low-voltage MOSFET technologies to deliver optimized performance in the ESBT topology. The device features a collector-source voltage rating of 1700 V, a continuous collector current of 3 A, and a total dissipation of 100 W at 25 °C case temperature. Packaged in a TO-247-4L through-hole housing, it offers very fast switching capabilities up to 150 kHz and a squared Reverse Biased Safe Operating Area (RBSOA).

Feature Summary

• Hybrid structure combining dedicated high-voltage bipolar and low-voltage MOSFET technologies for superior ESBT performance.
• Squared Reverse Biased Safe Operating Area (RBSOA) supporting operation up to 1700 V.
• Very fast switching characteristics enabling frequencies up to 150 kHz with low input capacitance driven by a 4.7 Ω gate resistor.

Applications

• Auxiliary flyback SMPS for three-phase mains applications

Procurement Notes

Verify component authenticity and datasheet revision status before integration. Confirm that the obsolete product designation does not conflict with long-term supply requirements. Ensure thermal management aligns with the specified junction-to-case resistance limits during design validation.

Selection Notes

Select this component when designing auxiliary power supplies for three-phase systems requiring high voltage isolation and fast switching speeds. Evaluate the TO-247-4L package constraints against available PCB space and verify that the 1700 V rating meets the specific circuit voltage demands.

Part Context

This device belongs to the ESBT series from STMicroelectronics, designed specifically for high-performance power conversion topologies. It utilizes a unique hybrid architecture distinct from standard IGBTs or MOSFETs, offering tailored benefits for auxiliary power stages in industrial and commercial three-phase equipment.

Replacement Considerations

No public confirmed substitute part numbers are documented in the provided source material.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 125 °C.

How is the device packaged?

The STC03DE170 is housed in a TO-247-4L tube packaging format.

What is the typical storage time for an inductive load?

The typical storage time is 760 ns under conditions of VGS = 10 V, RG = 47 Ω, VClamp = 1200 V, tp = 4 ms, IC = 1.8 A, and IB = 0.36 A.