STC04IE170HP

Overview

The STC04IE170HP is a monolithic emitter-switched bipolar transistor (ESBT) designed for high-frequency and high-voltage applications. It features a collector-source voltage of 1700 V, a continuous collector current of 4 A, and an equivalent ON resistance of 0.17 Ω. The device supports switching frequencies up to 150 kHz and utilizes a TO247-4L HP package.

Feature Summary

• High voltage and high current cascode configuration
• Squared reverse biased safe operating area up to 1700 V
• Very low input capacitance driven by RG = 47 Ω
• Very low turn-off crossover time

Applications

• Auxiliary switched-mode power supplies for three-phase mains

Procurement Notes

Verify the specific ordering code against official manufacturer documentation to ensure correct component selection. Confirm that the required package type matches the intended PCB layout constraints. Ensure all electrical ratings align with the system's operational requirements before procurement.

Selection Notes

Select this component for gate-driven topologies requiring high voltage isolation and fast switching speeds. Evaluate thermal management needs based on the specified junction-to-case thermal resistance. Consider the maximum operating junction temperature when designing the heat dissipation strategy.

Part Context

This device belongs to the ESBT family, which combines bipolar and MOSFET technologies. It is manufactured using monolithic technology to optimize performance in demanding power conversion environments. The design focuses on minimizing switching losses while maintaining robust high-voltage capabilities.

Replacement Considerations

STC04IE170HV is a confirmed substitute part number within the same product family.