STC04IE170HV

Overview

The STC04IE170HV is a monolithic emitter switched bipolar transistor (ESBT) designed for high-frequency and high-voltage applications. It features a cascode configuration with an equivalent ON resistance of 0.17 Ω, supporting up to 4 A collector current and switching speeds reaching 150 kHz. The device operates with a maximum collector-source voltage of 1700 V and includes squared RBSOA capabilities. Packaged in TO247-4L HV, it utilizes gate-driven topologies to deliver efficient performance in demanding power electronics environments.

Feature Summary

• Monolithic ESBT technology optimized for high frequency and high voltage operation
• High voltage and high current cascode configuration providing low equivalent ON resistance
• Squared Reverse Biased Safe Operating Area (RBSOA) ensuring robustness up to 1700 V
• Very fast switching characteristics with minimal turn-off crossover time

Applications

• Auxiliary Switching Mode Power Supplies (SMPS) for three-phase mains

Procurement Notes

Verify the specific ordering code against official STMicroelectronics documentation to ensure correct package type and environmental compliance grade. Confirm that the TO247-4L HV packaging matches your assembly requirements. Check for ECOPACK specifications if environmental directives are relevant to your manufacturing process. Ensure all electrical ratings align with your system's operational limits before procurement.

Selection Notes

Select this component when designing gate-driven topologies requiring high voltage isolation and fast switching speeds. The 1700 V rating and 4 A continuous current capability make it suitable for industrial power conversion. Consider the thermal resistance and total dissipation limits relative to your heat sinking strategy. Verify compatibility with your drive circuitry given the specific input capacitance and threshold voltage requirements.

Part Context

This device belongs to the ESBT family from STMicroelectronics, utilizing monolithic technology to combine the benefits of MOSFETs and IGBTs. It is engineered to provide superior performance in high-frequency applications compared to traditional discrete solutions. The product line focuses on efficiency and reliability in power management systems.

Replacement Considerations

Consult official STMicroelectronics resources for verified substitute part numbers. Cross-referencing should be performed using manufacturer-approved tools to ensure functional and pinout compatibility.

FAQ

What is the maximum collector-source voltage rating?

The absolute maximum collector-source voltage (VCS(SS)) is rated at 1700 V.

How does the device handle inductive load switching?

It features very low storage and fall times under inductive load conditions, with specific timing parameters defined for RG = 47 Ω and varying base currents.

What is the typical DC current gain?

The DC current gain (hFE) varies between 4 and 11 depending on the collector current and test conditions.