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The STC5DNF30V is an N-channel Power MOSFET rated for a drain-source voltage of 30 V and a continuous drain current of 5 A. It features a low on-state resistance (RDS(on)) of 28 mΩ at a gate drive voltage of 10 V, ensuring efficient power switching with minimal conduction losses. The device utilizes STripFET II technology to achieve high packing density and rugged avalanche characteristics within a compact SO-8 surface-mount package.
Verify the specific ordering suffix to confirm exact electrical tolerances and packaging options. Confirm availability status as distribution channels may vary. Ensure the component meets required automotive or industrial qualification standards before integration into final designs.
Select this component for applications requiring a balance of low on-resistance and moderate current handling in a standard surface-mount footprint. Evaluate thermal management requirements based on the specified RDS(on) and package thermal resistance for the intended operating environment.
This part belongs to the STMicroelectronics STripFET II family of N-channel MOSFETs. These devices are engineered using a unique single feature size process to deliver high packing density and manufacturing reproducibility while maintaining low on-resistance and robust avalanche performance.