STD16NF06T4

Single FETs, MOSFETs Overview

The STD16NF06T4 is an N-channel enhancement mode Power MOSFET from STMicroelectronics, utilizing the STripFET II process. It features a DPAK-3 (TO-252-3) surface-mount package with three pins. Key electrical parameters include a drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 16 A. The device exhibits a maximum on-resistance (Rds(on)) of 70 mΩ at 10 V gate drive. Gate characteristics specify a threshold voltage (Vgs(th)) of 1 V and a typical gate charge (Qg) of 7.5 nC. Thermal performance includes a power dissipation (Pd) of 40 W and an operating temperature range from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• STripFET II technology provides low input capacitance and minimized gate charge for efficient switching.
• Logic-level design enables direct drive from standard logic voltages with low threshold requirements.
• High packing density achieves low on-resistance within the compact DPAK-3 package.

Single FETs, MOSFETs Applications

• Primary switching in isolated DC-DC converters
• Telecommunications power supply circuits
• Computer application power management

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'T4' corresponds to the reel packaging configuration required for your assembly line. Confirm that the DPAK-3 footprint matches your PCB layout constraints. Ensure thermal management solutions account for the 40 W power dissipation rating under expected load conditions. Cross-reference the manufacturer datasheet for absolute maximum ratings to prevent overstress during operation.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V breakdown voltage and 16 A current capacity are required in a surface-mount form factor. The low gate charge makes it suitable for high-frequency applications where driving losses must be minimized. Compare Rds(on) values against alternative packages if higher current handling or lower thermal resistance is needed for the specific system design.

Single FETs, MOSFETs Part Context

This part belongs to the STripFET II family of N-channel Power MOSFETs designed for general-purpose switching. The series utilizes a strip-based process to enhance packing density and reduce on-resistance. It serves as a medium-voltage solution for industrial and consumer electronics requiring reliable performance in compact designs.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same series include STD12NF06T4 (12 A) and STD30NF06LT4 (30 A), provided pin compatibility and thermal limits are verified. Other TO-252 packaged 60 V N-channel MOSFETs may require schematic review due to potential differences in gate charge and thermal resistance specifications.