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STD7N65M6 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 650V 5A DPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STD7N65M6
- Description：MOSFET N-CH 650V 5A DPAK
- Series：MDmesh™ M6
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：990mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：3.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.9 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：220 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：60W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for STD7N65M6
Single FETs, MOSFETs Overview
The STD7N65M6 is an N-channel Power MOSFET from STMicroelectronics, utilizing MDmesh M6 Super-Junction technology. It features a 650 V drain-source voltage rating and a typical on-resistance of 1.4 Ohms. The device supports a continuous drain current of 3.5 A and operates within a temperature range of -55°C to +150°C. Packaged in DPAK, it integrates Zener protection and has undergone 100% avalanche testing for reliability.
Single FETs, MOSFETs Feature Summary
- MDmesh M6 Super-Junction technology providing improved RDS(on) per area and effective switching behavior
- Integrated Zener protection between gate and source terminals
- 100% avalanche tested for enhanced ruggedness
- Low gate input resistance for user-friendly driving
Single FETs, MOSFETs Applications
- Isolated quasi-resonant flyback converters
- USB Type-C PD power adapter designs
- General-purpose high-efficiency power conversion
Single FETs, MOSFETs Procurement Notes
Verify the specific package variant and manufacturing date code against the latest datasheet revision before procurement. Confirm that the application environment remains within the specified thermal limits and that the gate drive circuitry respects the absolute maximum ratings. Ensure compliance with RoHS directives if required by the end product specifications.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring robust high-voltage switching with moderate current capabilities. The MDmesh M6 technology offers a balance of low conduction losses and efficient switching performance. Consider the DPAK package for through-hole or surface-mount assembly depending on board layout constraints and thermal management requirements.
Single FETs, MOSFETs Part Context
This part belongs to the MDmesh M6 family of Super-Junction MOSFETs, representing an advancement over previous generations with better efficiency metrics. It is designed to replace older technologies in compact power supplies, offering reduced switching losses and lower on-resistance relative to its footprint size.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include other MDmesh M6 devices with similar electrical characteristics, such as the STU3N65M6 in an IPAK package. Verify pin compatibility and thermal performance when considering alternative packages within the same technology family.
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