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The STE07DE220 is a hybrid emitter switched bipolar transistor (ESBT) power module featuring an ultra-low equivalent on resistance of 0.07 Ω and a collector-source ON voltage of 0.5 V at 7 A. It integrates a high-voltage cascode configuration with a breakdown voltage of 2200 V, supporting a continuous collector current of 7 A and peak currents up to 14 A. The device operates with fast switching capabilities up to 150 kHz and includes thermal protection with a maximum junction temperature of 125 °C.
Verify component authenticity through authorized STMicroelectronics distributors or verified supply chain channels. Confirm datasheet revision status as this document represents preliminary data subject to change without notice. Ensure procurement specifications align with the ISOTOP package requirements and ECOPACK environmental compliance standards defined in the official documentation.
Select this component for designs requiring high-voltage isolation combined with low conduction losses. The 2200 V rating supports demanding industrial environments. Evaluate thermal management needs against the 0.45 °C/W junction-to-case resistance. Verify that gate drive circuits can accommodate the specified threshold voltage and base current requirements for optimal switching performance.
This device belongs to the ESBT family, utilizing a hybrid structure to merge the benefits of bipolar and MOSFET technologies. It is designed specifically for high-voltage power conversion where efficiency and switching speed are critical. The ISOTOP packaging facilitates direct mounting to heatsinks for effective thermal dissipation in compact industrial power modules.
No public confirmed substitute part numbers are available in the provided documentation.