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STF12N65M2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 650V 8A TO220FP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STF12N65M2
- Description：MOSFET N-CH 650V 8A TO220FP
- Series：MDmesh™ M2
- Mfr：STMicroelectronics
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：500mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16.5 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：535 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220FP
- Package / Case：TO-220-3 Full Pack
Single FETs, MOSFETs datasheet and documents for STF12N65M2
Single FETs, MOSFETs Overview
The STF12N65M2 is an N-channel enhancement mode Power MOSFET from STMicroelectronics, utilizing MDmesh M2 super-junction technology. It features a 600 V drain-source voltage rating and a maximum continuous drain current of 9 A. The device offers a typical on-resistance of 450 mΩ at 10 V gate drive. Packaged in a TO-220 through-hole housing, it supports a power dissipation of 25 W and operates within a temperature range of -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- MDmesh M2 super-junction technology for optimized performance
- Enhanced output capacitance profile for high efficiency
- 100% avalanche tested for robustness
Single FETs, MOSFETs Applications
- High-efficiency DC-DC converters
- Power factor correction circuits
- Isolated flyback converters
Single FETs, MOSFETs Procurement Notes
Verify the specific package variant and marking code against the official datasheet before procurement. Confirm that the component meets all required industrial specifications and RoHS compliance standards. Ensure thermal management solutions align with the 25 W power dissipation limit under intended operating conditions.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high-voltage switching with moderate current capabilities. The TO-220 package facilitates through-hole mounting for improved thermal handling compared to surface-mount alternatives. Consider the 450 mΩ on-resistance when calculating conduction losses in low-frequency switching scenarios.
Single FETs, MOSFETs Part Context
This part belongs to the MDmesh M2 series of super-junction MOSFETs designed for high-efficiency power conversion. The series targets demanding applications where reduced switching losses and low on-resistance are critical. It represents a generation of silicon devices optimized for cost-effective performance in general-purpose power supplies.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include other N-channel 600V/650V MOSFETs with similar current ratings and Rds(on) values. Verify pinout compatibility and thermal resistance characteristics when considering alternative manufacturers or different package styles within the same voltage class.
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