STF13N60M2

Single FETs, MOSFETs Overview

STF13N60M2 is an N-channel enhancement mode power MOSFET from STMicroelectronics' MDmesh M2 series. It features a maximum drain-source voltage of 650 V and a continuous drain current of 11 A at case temperature. The device utilizes strip layout technology to achieve low on-resistance, with a maximum value of 0.38 Ω. Packaged in TO-220FP for through-hole mounting, it offers extremely low gate charge and input capacitance. The component operates within a junction temperature range of -55 °C to +150 °C and includes Zener protection.

Single FETs, MOSFETs Feature Summary

• MDmesh M2 technology providing low on-resistance and optimized switching performance
• Extremely low gate charge and input capacitance for efficient drive requirements
• Integrated Zener diode between gate and source for electrostatic discharge protection
• 100% avalanche tested for robustness in inductive switching applications

Single FETs, MOSFETs Applications

• High-efficiency DC-DC converters
• Resonant LLC converters
• General-purpose high-voltage switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant, as STF13N60M2 typically denotes the standard TO-220FP. Confirm that the required voltage rating aligns with the 650 V specification rather than the generic 600 V class. Ensure the sourcing channel provides original manufacturer documentation to validate the MDmesh M2 generation and RoHS compliance status before integration into production designs.

Single FETs, MOSFETs Selection Notes

Select this component when designing for high-frequency operation requiring minimal gate drive power. The low gate charge reduces driver losses compared to older generations. Verify thermal management capabilities for the TO-220FP package, as the 25 W dissipation rating depends on adequate heatsinking. Consider the 11 A current limit relative to peak load demands in the target application circuit.

Single FETs, MOSFETs Part Context

The STF13N60M2 belongs to the MDmesh M2 family, representing a second-generation improvement over standard planar technologies. This series focuses on reducing the figure of merit (R_DS(on) x Q_g) to enhance overall system efficiency. It serves as a direct successor to earlier MDmesh iterations, offering better trade-offs between conduction losses and switching speed for medium-power applications.

Single FETs, MOSFETs Replacement Considerations

STF13N60DM2: Features integrated fast-recovery body diode suitable for bridge topologies. STP13N60M2: Standard TO-220 package instead of FP; verify pin compatibility. STF13NM60N: Older MDmesh II generation; check parameter differences.