STF22N60M6

Single FETs, MOSFETs Overview

The STF22N60M6 is an N-channel Power MOSFET utilizing MDmesh M6 super-junction technology, housed in a TO-220FP package. It features a 600 V drain-source breakdown voltage and a maximum on-resistance of 230 mΩ at VGS = 10 V. The device supports a continuous drain current of 15 A at Tcase = 25 °C and handles pulsed currents up to 42 A. Key electrical parameters include a typical gate charge of 20 nC, input capacitance of 800 pF, and a thermal resistance junction-to-case of 4.2 °C/W. It operates within a junction temperature range of -55 °C to 150 °C.

Single FETs, MOSFETs Feature Summary

• MDmesh M6 technology provides improved RDS(on) per area and effective switching behavior compared to previous generations.
• Includes Zener protection between the gate and source terminals for enhanced robustness.
• Subjected to 100% avalanche testing to ensure reliability under unclamped inductive load conditions.
• Features low gate input resistance to facilitate efficient driver interface.

Single FETs, MOSFETs Applications

• LLC converters
• Boost PFC converters
• General switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision (e.g., DS12823 Rev 1) against your design requirements, as ST may update specifications without notice. Confirm that the TO-220FP package dimensions align with your PCB footprint and thermal management strategy. Ensure the selected component grade meets any applicable environmental compliance standards required by your final assembly process.

Single FETs, MOSFETs Selection Notes

Select this component when designing high-efficiency power conversion circuits requiring a balance of low conduction losses and fast switching speeds. The MDmesh M6 architecture is suitable for demanding topologies where reduced switching losses are critical. Consider the 600 V rating and 15 A continuous current capability to ensure adequate headroom for your specific voltage and load profiles.

Single FETs, MOSFETs Part Context

This device belongs to the MDmesh family of super-junction MOSFETs from STMicroelectronics. The M6 generation represents a technological advancement over earlier iterations, focusing on optimizing the trade-off between on-resistance and switching performance. It is designed to maximize end-application efficiency in modern power supply designs.

Single FETs, MOSFETs Replacement Considerations

Direct replacements within the same series include STP22N60M6 and STB22N60M6, which share identical electrical characteristics but differ in package type (TO-220 vs D2PAK). Verify pinout compatibility and thermal dissipation capabilities before substituting packages.

Single FETs, MOSFETs FAQ

What is the insulation withstand voltage of the STF22N60M6?

The device has an insulation withstand voltage of 2.5 kV RMS from all three leads to the external heat sink, tested for 1 second at Tcase = 25 °C.

Does the STF22N60M6 support avalanche operation?

Yes, the device is 100% avalanche tested. It can handle a repetitive or non-repetitive avalanche current of 2.9 A and a single pulse avalanche energy of 230 mJ starting from Tj = 25 °C.

What is the peak diode recovery voltage slope rating?

The peak diode recovery voltage slope (dv/dt) is rated at 15 V/ns, measured under conditions of ISD ≤ 15 A, di/dt = 400 A/μs, VDS < V(BR)DSS, and VDD = 400 V.