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STF25NM60ND is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 600V 21A TO220FP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STF25NM60ND
- Description：MOSFET N-CH 600V 21A TO220FP
- Series：FDmesh™ II
- Mfr：STMicroelectronics
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：160mOhm @ 10.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：2400 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：40W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220FP
- Package / Case：TO-220-3 Full Pack
Single FETs, MOSFETs datasheet and documents for STF25NM60ND
Single FETs, MOSFETs Overview
STF25NM60ND is an N-channel enhancement mode MOSFET from STMicroelectronics, utilizing FDmesh II technology. It features a TO-220FP package with a maximum drain-source voltage of 650 V and a continuous drain current of 21 A. The device exhibits a typical on-resistance of 175 mΩ at 10 V gate drive. Key electrical parameters include a total gate charge of 54.6 nC, input capacitance of 3800 pF, and power dissipation of 35 W. Operating temperatures range from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Incorporates FDmesh II technology for optimized performance in switching applications.
- Features low on-resistance and reduced gate charge for improved efficiency.
- Includes 100% avalanche testing for enhanced ruggedness and reliability.
Single FETs, MOSFETs Applications
- High-frequency power supplies
- Motor control circuits
- DC-DC converters
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'ND' against official datasheets to confirm package type and thermal characteristics. Confirm RoHS compliance status through manufacturer documentation. Check for obsolescence notices as this component may be subject to lifecycle changes. Ensure sourcing channels provide authentic parts with traceable manufacturing data.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high voltage handling and efficient switching. Compare on-resistance and gate charge requirements against circuit specifications. Consider thermal management needs given the 35 W power dissipation rating. Evaluate compatibility with existing driver circuits based on gate threshold voltage levels.
Single FETs, MOSFETs Part Context
This part belongs to the FDmesh II series of N-channel MOSFETs designed for general-purpose switching. It shares technological lineage with other devices in the family but offers distinct electrical characteristics suited for specific power levels. The TO-220FP package provides robust mechanical mounting and thermal performance for through-hole applications.
Single FETs, MOSFETs Replacement Considerations
STF26NM60ND serves as a verified substitute within the same series, offering comparable electrical performance and pinout compatibility for direct replacement in compatible designs.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
