STF30NM60N

$5.30

Description：MOSFET N-CH 600V 25A TO220FP
Series：MDmesh™ II
Mfr：STMicroelectronics
Package：Tube

SKU:83fbbc9d3673 Category: Single FETs, MOSFETs Brand: STMicroelectronics

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Product introduction

STF30NM60N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 600V 25A TO220FP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STF30NM60N

Description：MOSFET N-CH 600V 25A TO220FP
Series：MDmesh™ II
Mfr：STMicroelectronics
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：130mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：91 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：2700 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：40W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220FP
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for STF30NM60N

STF30NM60N

Single FETs, MOSFETs Overview

The STF30NM60N is an N-channel enhancement-mode Power MOSFET from the MDmesh II series by STMicroelectronics. It features a maximum drain-source voltage of 600 V and a continuous drain current of 25 A. The device utilizes TO-220 or TO-220FP packages for through-hole mounting. Key electrical parameters include a maximum on-resistance of 0.1 Ω, a typical gate charge of 44 nC at 10 V, and a power dissipation rating of 40 W. It operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Integrates vertical structure with strip layout technology to achieve low on-resistance and gate charge.
Utilizes MDmesh II technology for optimized performance in high-voltage switching applications.

Single FETs, MOSFETs Applications

High-frequency power supplies
DC-DC converters
Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant (TO-220 or TO-220FP) required for your design, as both are supported by this part number. Confirm that the thermal management solution aligns with the 40 W power dissipation rating under your operating conditions. Ensure compatibility with standard through-hole assembly processes.

Single FETs, MOSFETs Selection Notes

Select this component when a 600 V blocking capability and 25 A current handling are required in a through-hole package. The MDmesh II technology offers a balance between conduction losses and switching speed. Consider the 0.1 Ω on-resistance for efficiency calculations in low-voltage, high-current secondary-side rectification or synchronous buck applications.

Single FETs, MOSFETs Part Context

This device belongs to the MDmesh II family, which combines vertical power MOSFET structures with ST's proprietary strip layout. This architecture reduces cell pitch and improves packing density, resulting in lower specific on-resistance compared to previous generations. It is designed for general-purpose high-voltage switching applications requiring robust performance.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for direct replacements such as STF7NM60N or STD3NM60N, noting differences in current ratings and package types. Verify pinout compatibility and thermal characteristics before substitution.