STFI20NK50Z

Single FETs, MOSFETs Overview

The STFI20NK50Z is an N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology. It features a maximum drain-source voltage of 500 V, a continuous drain current of 17 A at 25 °C case temperature, and a maximum static drain-source on-resistance of 0.27 Ω. The device is housed in an I²PAKFP (TO-281) package with a total dissipation rating of 40 W at 25 °C. Key electrical parameters include a gate threshold voltage ranging from 3 V to 4.5 V, a typical total gate charge of 119 nC, and a peak diode recovery voltage slope of 4.5 V/ns.

Single FETs, MOSFETs Feature Summary

• Integrated back-to-back Zener diodes provide enhanced ESD protection and absorb gate-source voltage transients without external components.
• SuperMESH™ technology optimization ensures extremely high dv/dt capability for demanding switching applications.
• Fully insulated low-profile package design increases the creepage path from pins to the heatsink plate.

Single FETs, MOSFETs Applications

• General switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code and marking against official documentation before procurement. Confirm that the I²PAKFP (TO-281) package dimensions align with the target PCB footprint and thermal management requirements. Ensure the selected component grade meets environmental compliance standards required for the final assembly process.

Single FETs, MOSFETs Selection Notes

Select this component when high dv/dt immunity and integrated gate protection are required. The I²PAKFP package offers increased creepage distance compared to standard packages. Evaluate the thermal resistance values against the system's heat sink capabilities to ensure junction temperatures remain within the 150 °C limit during operation.

Single FETs, MOSFETs Part Context

This device belongs to the SuperMESH™ series of power MOSFETs manufactured by STMicroelectronics. The series utilizes an optimized strip-based layout to reduce on-resistance while maintaining robust performance characteristics suitable for high-voltage power conversion environments.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists for verified alternatives. Cross-reference pinouts, package dimensions, and electrical ratings carefully when considering equivalent devices from other manufacturers or different product lines.