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STFI34N65M5 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N CH 650V 28A I2PAKFP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STFI34N65M5
- Description：MOSFET N CH 650V 28A I2PAKFP
- Series：MDmesh™ V
- Mfr：STMicroelectronics
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：110mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：62.5 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：2700 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：35W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-281 (I2PAKFP)
- Package / Case：TO-262-3 Full Pack, I2PAK
Single FETs, MOSFETs datasheet and documents for STFI34N65M5
Single FETs, MOSFETs Overview
STFI34N65M5 is an N-channel MDmesh V Power MOSFET in the I2PAKFP (TO-281) package. It features a maximum drain-source voltage of 710 V and a continuous drain current of 28 A at 25 °C case temperature. The typical static drain-source on-resistance is 0.09 Ω, with a maximum of 0.11 Ω at VGS = 10 V and ID = 14 A. Total gate charge is typically 62.5 nC at VDD = 520 V. The device supports a repetitive avalanche current of 7 A and single pulse energy of 510 mJ.
Single FETs, MOSFETs Feature Summary
- Combines innovative vertical process technology with horizontal layout for extremely low on-resistance
- Features high dv/dt capability and excellent switching performance
- Subjected to 100% avalanche testing for ruggedness
Single FETs, MOSFETs Applications
- Switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code STFI34N65M5 against official documentation to confirm the I2PAKFP (TO-281) surface-mount package variant. Ensure that design requirements align with the absolute maximum ratings, particularly the thermal resistance junction-case value of 3.57 °C/W and the insulation withstand voltage of 2500 V RMS. Confirm compliance with environmental specifications such as ECOPACK grades before procurement.
Single FETs, MOSFETs Selection Notes
Select this component when high power density and superior efficiency are required due to its unmatched on-resistance characteristics among silicon-based MOSFETs. Consider the I2PAKFP package for surface-mount assembly needs while maintaining high-power performance. Evaluate the thermal management requirements based on the specified junction-to-ambient thermal resistance of 62.5 °C/W for appropriate heat sinking solutions.
Single FETs, MOSFETs Part Context
This part belongs to the MDmesh V series from STMicroelectronics, utilizing proprietary vertical process technology combined with the PowerMESH horizontal layout structure. This combination results in exceptionally low on-resistance, making the series suitable for applications demanding high power density and outstanding efficiency compared to standard silicon MOSFETs.
Single FETs, MOSFETs Replacement Considerations
The STF34N65M5 is a related device within the same datasheet offering identical electrical characteristics but housed in a TO-220FP through-hole package instead of the I2PAKFP surface-mount configuration.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
