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STFW12N120K5 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 1200V 12A ISOWATT. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STFW12N120K5
- Description：MOSFET N-CH 1200V 12A ISOWATT
- Series：MDmesh™ K5
- Mfr：STMicroelectronics
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：690mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：44.2 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1370 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：63W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3PF
- Package / Case：TO-3P-3 Full Pack
Single FETs, MOSFETs datasheet and documents for STFW12N120K5
Single FETs, MOSFETs Overview
The STFW12N120K5 is an N-channel power MOSFET utilizing MDmesh K5 technology. It features a 1200 V breakdown voltage, a typical on-resistance of 620 mOhm, and a continuous drain current of 12 A. The device is housed in a TO-3PF package.
Single FETs, MOSFETs Feature Summary
- MDmesh K5 technology for reduced on-resistance and ultra-low gate charge
- 100% avalanche tested for reliability
- Integrated Zener protection
Single FETs, MOSFETs Applications
- High power density applications
- High efficiency power conversion systems
Single FETs, MOSFETs Procurement Notes
Verify the specific datasheet version and ordering information directly with STMicroelectronics or authorized distributors to ensure compliance with current specifications and availability before finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high voltage handling and superior power density. The low figure of merit and reduced gate charge make it suitable for efficient switching applications where thermal management is critical.
Single FETs, MOSFETs Part Context
This part belongs to the MDmesh K5 series of very high voltage super-junction MOSFETs from STMicroelectronics, developed using proprietary vertical structure technology to enhance performance in demanding power electronics environments.
Single FETs, MOSFETs Replacement Considerations
STH12N120K5-2 (H2PAK-2 package) and STWA12N120K5 (TO-247 long leads package) are alternative packages within the same electrical specification family.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
