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The STGB10NB37LZT4 is a single IGBT from the PowerMESH™ series, manufactured by STMicroelectronics. It features a maximum collector-emitter breakdown voltage of 440 V and a continuous collector current of 20 A at 25°C. The device supports a pulse collector current of 40 A and dissipates up to 125 W of power. Key electrical parameters include a gate charge of 28 nC and a typical on-state voltage drop of 1.8 V at 10 A with a 4.5 V gate drive. Switching energies are rated at 2.4 mJ for turn-on and 5 mJ for turn-off under test conditions of 328 V and 10 A. The component operates within a junction temperature range of -65°C to 175°C and is housed in a surface-mount D2PAK package.
Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and lead time specifications. Confirm RoHS compliance status and湿气敏感性等级 (MSL) requirements prior to assembly planning. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and current production status.
Select this component for applications requiring a 440 V rating with moderate current handling capabilities. Ensure the thermal management design accommodates the 125 W power dissipation limit within the specified operating temperature range. Verify that the gate drive circuitry can provide the necessary voltage levels to achieve the specified switching energy characteristics.
This device belongs to the STGB10 series of single IGBTs produced by STMicroelectronics. The series utilizes PowerMESH™ technology to enhance efficiency and switching performance. The STGB10NB37LZT4 variant specifically offers a 440 V breakdown voltage and is packaged in a D2PAK form factor suitable for surface-mount applications.
Consult official substitution guides for compatible alternatives within the same voltage and current class. Verify pinout compatibility and thermal resistance values before implementing any substitute components.