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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 30A TO-263
- Series：-
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 15A
- Power - Max：136 W
- Switching Energy：90µJ (on), 450µJ (off)
- Input Type：Standard
- Gate Charge：45 nC
- Td (on/off) @ 25°C：24ns/93ns
- Test Condition：400V, 15A, 12Ohm, 15V
- Reverse Recovery Time (trr)：142 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263 (D2PAK)
- Grade：-
- Qualification：-
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Overview
The STGB15M65DF2 is a single IGBT from the M series, utilizing an advanced trench gate field-stop structure. It features a maximum collector-emitter voltage of 650 V and a continuous collector current of 15 A at 25°C. The typical saturation voltage is 1.55 V at 15 A. It supports a minimum short-circuit withstand time of 6 µs and operates within a junction temperature range of -55°C to 175°C.
Feature Summary
- Advanced proprietary trench gate field-stop structure for optimized performance
- Positive VCE(sat) temperature coefficient enabling safer paralleling operation
- Soft and very fast recovery antiparallel diode
- Tight parameter distribution for consistent device behavior
Applications
- Inverter systems requiring low loss and short-circuit capability
- Motor control applications
- Power supplies where efficiency is essential
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct package and electrical specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer before placing orders. Ensure storage conditions align with semiconductor handling guidelines.
Selection Notes
Select this component for designs prioritizing low switching losses and robust short-circuit immunity. The positive temperature coefficient facilitates parallel connection without active current sharing circuits. Verify thermal management requirements based on the specified power dissipation and thermal resistance values in the datasheet.
Part Context
This device belongs to STMicroelectronics' M series IGBTs, designed to balance inverter system performance and efficiency. The series emphasizes low-loss characteristics and high reliability, making it suitable for demanding industrial and consumer power electronics applications.
Replacement Considerations
Check for direct pin-compatible substitutes within the same M series family, such as different current ratings like STGF15M65DF2 or STGB30M65DF2, ensuring voltage and thermal parameters meet design requirements.
