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Product Detailed Parameters
- Description：IGBT 425V 40A 200W D2PAK
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：425 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：2V @ 4.5V, 20A
- Power - Max：200 W
- Switching Energy：11.8mJ (off)
- Input Type：Standard
- Gate Charge：51 nC
- Td (on/off) @ 25°C：2.3µs/2µs
- Test Condition：250V, 20A, 1kOhm, 4.5V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The STGB20NB37LZ is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from STMicroelectronics, utilizing PowerMESH technology. It features a collector-emitter breakdown voltage of 440 V and a continuous collector current of 20 A at 25°C. The device operates within a junction temperature range of -65°C to 175°C and dissipates up to 125 W of power. Packaged in a D2PAK (TO-263-3) surface-mount housing, it includes an integrated gate resistor for simplified drive circuitry.
Feature Summary
- PowerMESH technology optimized for low on-state saturation voltage
- Integrated gate resistor eliminates external protection components
- High short-circuit withstand capability with internal clamping
- Logic-level gate drive compatibility
Applications
- Automotive ignition systems
- Motor control applications
- General-purpose switching circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm package type and tape/reel specifications. Ensure the component meets required automotive or industrial qualification standards before procurement. Cross-reference the full part number with authorized distributors to confirm availability and authenticity.
Selection Notes
Select this IGBT for designs requiring robust performance in high-voltage environments. The integrated gate resistor simplifies layout and reduces component count. Verify that the thermal management solution supports the 125 W power dissipation rating under expected operating conditions. Confirm gate drive voltage compatibility with the logic-level input requirements.
Part Context
This component belongs to the STGB series of application-specific IGBTs designed by STMicroelectronics. The series utilizes advanced PowerMESH trench technology to achieve low conduction losses. These devices are engineered for reliability in harsh environments, particularly within automotive electronics where high surge currents and thermal cycling are common.
Replacement Considerations
Direct replacements include STGB10NB37LZT4 for lower current variants within the same voltage class. Other compatible options may include STGB25N36LZAG for higher current automotive applications. Always verify pinout compatibility and electrical parameters against the original design specifications.
