STGB30H65DFB2

Overview

The STGB30H65DFB2 is a trench gate field-stop IGBT from the HB2 series, rated at 650 V and 30 A in a D²PAK package. It features a maximum junction temperature of 175 °C and a typical collector-emitter saturation voltage (VCE(sat)) of 1.65 V at IC = 30 A. The device includes a co-packaged antiparallel diode with a forward on-voltage (VF) of 1.80 V at IF = 30 A. Thermal resistance from junction to case is 0.9 °C/W for the IGBT and 1.47 °C/W for the diode. Switching energy at TJ = 175 °C is 477 μJ (Eon) and 643 μJ (Eoff).

Feature Summary

• Evolution of proprietary trench gate field-stop structure optimized for conduction and switching performance.
• Co-packaged very fast soft recovery diode designed to maximize efficiency in high-speed applications.
• Positive VCE(sat) temperature coefficient enabling safer paralleling operation.
• Minimized tail current and tight parameter distribution.

Applications

• Welding
• PFC converters - single phase input
• Solar inverters (string and central)
• Uninterruptable power supplies (UPS)
• EV charging - DC fast charging stations

Procurement Notes

Verify the specific ordering code against the manufacturer's official documentation to ensure correct configuration. Confirm that the D²PAK tape and reel packing matches the production requirements. Check for any recent product change notifications or environmental compliance updates prior to finalizing procurement orders.

Selection Notes

Select this component for designs requiring high-speed switching and low conduction losses in the 650 V range. Ensure the thermal management system can handle the specified junction-to-case thermal resistance. Verify that the gate drive circuitry supports the required VGE levels and total gate charge characteristics for optimal switching performance.

Part Context

This part belongs to the HB2 series of IGBTs, representing an evolution of advanced trench gate field-stop technology. It is designed to offer an optimum compromise between conduction and switching loss, maximizing efficiency for a wide range of fast applications compared to previous generations.

Replacement Considerations

STGF30H65DFB2: Same electrical ratings but in TO-220FP package. STGWA30H65DFB2: Same electrical ratings but in TO-247 Long L package. Verify pinout compatibility and thermal interface requirements when substituting.

FAQ

What is the maximum continuous collector current at TC = 100 °C?

The maximum continuous collector current at a case temperature of 100 °C is 30 A.

What are the typical switching energies at TJ = 175 °C?

At TJ = 175 °C, the typical turn-on switching energy (Eon) is 477 μJ and the typical turn-off switching energy (Eoff) is 643 μJ.

Does the device have a positive temperature coefficient for VCE(sat)?

Yes, the device features a positive VCE(sat) temperature coefficient, which facilitates safer paralleling operation.