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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 60A TO-263
- Series：HB
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 30A
- Power - Max：260 W
- Switching Energy：151µJ (on), 293µJ (off)
- Input Type：Standard
- Gate Charge：149 nC
- Td (on/off) @ 25°C：37ns/146ns
- Test Condition：400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263 (D2PAK)
- Grade：-
- Qualification：-
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Overview
The STGB30H65FB is a silicon Insulated Gate Bipolar Transistor (IGBT) from the HB2 series, manufactured by STMicroelectronics. It utilizes a Trench gate field-stop technology to achieve high-speed performance in a D2PAK package. The device features a maximum collector-emitter voltage of 650 V and a continuous collector current of 30 A at 25°C. Key electrical parameters include a typical saturation voltage of 1.85 V and a power dissipation rating of 260 W. It operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Trench gate field-stop structure for optimized switching and conduction losses
- High-speed operation suitable for high-frequency converters
- Positive temperature coefficient for safe paralleling
Applications
- High-frequency power conversion circuits
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Switched-mode power supplies (SMPS)
Procurement Notes
Verify component authenticity through authorized STMicroelectronics distributors or certified partners. Request original manufacturer datasheets and test reports to confirm technical specifications match the part number. Ensure compliance with relevant environmental directives such as RoHS before integration into final products.
Selection Notes
Select this IGBT when a 650 V blocking voltage and 30 A continuous current are required in a surface-mount D2PAK package. Consider the HB2 series characteristics for applications demanding fast switching speeds and low thermal resistance. Evaluate thermal management requirements based on the 260 W power dissipation capability and operating temperature limits.
Part Context
This component belongs to the STMicroelectronics HB2 series of IGBTs. The series is characterized by advanced trench gate field-stop technology designed for high-efficiency power switching. The D2PAK package provides robust mechanical stability and efficient heat dissipation for industrial and consumer electronics applications.
Replacement Considerations
Direct substitutes may include other 650 V, 30 A IGBTs in D2PAK packages from STMicroelectronics or other manufacturers. Verify pinout compatibility, saturation voltage, and switching times before substitution. Cross-reference specific part numbers like STGB30H60DLFB for similar electrical profiles.
