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Product Detailed Parameters
- Description：IGBT 600V 60A 185W D2PAK
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：125 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 20A
- Power - Max：185 W
- Switching Energy：350µJ (on), 435µJ (off)
- Input Type：Standard
- Gate Charge：96 nC
- Td (on/off) @ 25°C：29ns/120ns
- Test Condition：480V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The STGB30NC60KT4 is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 30 A at 25 °C case temperature. The device utilizes the PowerMESH technology to achieve low on-state voltage drop and fast switching characteristics. It is housed in a TO-220 package with three pins for surface or through-hole mounting. The component operates within a junction temperature range of -55 °C to 150 °C and includes an integrated ultra-fast freewheeling diode.
Feature Summary
- Advanced PowerMESH technology ensures excellent trade-off between switching performance and low on-state behavior
- Integrated ultra-fast recovery antiparallel diode for efficient commutation
- Short-circuit ruggedness with withstand time up to 10 μs
- Low CRES/CIES ratio eliminates susceptibility to cross-conduction
Applications
- High frequency inverters
- Motor drives
- SMPS and PFC in both hard switch and resonant topologies
Procurement Notes
Verify the specific suffix 'T4' indicates tape-and-reel packaging when sourcing components. Confirm the manufacturer datasheet revision matches the required electrical parameters. Ensure the supplier provides original STMicroelectronics documentation to validate authenticity. Check for RoHS compliance status as per current manufacturing standards. Validate the package type corresponds to the intended PCB layout requirements.
Selection Notes
Select this component for applications requiring high-frequency operation and robust short-circuit protection. The 600 V rating suits medium-voltage power conversion systems. Consider the thermal resistance and package type for heat dissipation needs. Compare the on-state voltage drop against efficiency requirements. Verify compatibility with gate drive voltages and switching frequencies.
Part Context
This IGBT belongs to the STGx30NC60K family, designed for high-performance power switching. It shares technological similarities with other models in the series but offers specific current ratings suited for moderate power levels. The device is part of STMicroelectronics' portfolio of trench-gate field-stop IGBTs, optimized for modern power electronics designs.
Replacement Considerations
Compatible substitutes include STGF30NC60KD and STGP30NC60KD from the same manufacturer. These alternatives share similar electrical characteristics and package configurations. Verify pinout compatibility and thermal performance before substitution. Ensure the replacement meets the same short-circuit ruggedness specifications.
