STGB7NB60KDT4

STGB7NB60KDT4

$0.72
  • Description:IGBT 600V 14A 80W D2PAK
  • Series:PowerMESH™

SKU:a4132d7584b5 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IGBT 600V 14A 80W D2PAK
  • Series:PowerMESH™
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR)
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):14 A
  • Current - Collector Pulsed (Icm):56 A
  • Vce(on) (Max) @ Vge, Ic:2.8V @ 15V, 7A
  • Power - Max:80 W
  • Switching Energy:140µJ (off)
  • Input Type:Standard
  • Gate Charge:32.7 nC
  • Td (on/off) @ 25°C:15ns/50ns
  • Test Condition:480V, 7A, 10Ohm, 15V
  • Reverse Recovery Time (trr):50 ns
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:D2PAK
  • Grade:-
  • Qualification:-

Download product information

STGB7NB60KDT4

Overview

The STGB7NB60KDT4 is an N-channel PowerMESH IGBT from STMicroelectronics, packaged in a D2PAK (TO-263) surface-mount housing. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 14 A at 25°C, derating to 7 A at 100°C case temperature. The device has a maximum collector-emitter saturation voltage of 2.8 V at 15 V gate drive and 7 A. Total power dissipation is rated at 80 W at 25°C. It includes a co-packaged TurboSwitch antiparallel diode with a forward current of 7 A. Short-circuit withstand time is specified as 10 µs.

Feature Summary

  • PowerMESH technology provides low on-voltage drop and high input impedance for efficient switching.
  • Co-packaged TurboSwitch antiparallel diode ensures fast recovery characteristics.
  • Rated for short-circuit withstand capability up to 10 microseconds.

Applications

  • High frequency motor controls
  • SMPS and PFC in hard switching topologies
  • Resonant converter applications

Procurement Notes

Verify the specific suffix T4 indicates tape and reel packaging containing 1000 units per reel. Confirm the component matches the exact datasheet revision date of May 2004 to ensure parameter accuracy. Check for RoHS compliance status if required by local regulations. Ensure storage conditions remain within the -55 to 150 °C range before assembly.

Selection Notes

Select this component when a 600 V rating and 7 A continuous current are sufficient for the load. The D2PAK package requires adequate thermal management due to its junction-to-case resistance. Consider the 10 µs short-circuit protection window when designing fault detection circuits. Verify that the gate drive voltage supports the 15 V specification for optimal saturation performance.

Part Context

This part belongs to the PowerMESH family designed for high-frequency operation. The 'K' suffix identifies optimization for high-frequency motor control with short-circuit withstand capabilities. It is distinct from standard variants by its integrated antiparallel diode and specific switching characteristics tailored for resonant and hard-switching environments.

Replacement Considerations

Direct replacements must match the 600 V rating, 7 A current, and D2PAK footprint. Verify that any substitute also offers a 10 µs short-circuit withstand time and similar TurboSwitch diode characteristics. Cross-reference gate charge values to ensure driver compatibility without modification.

STGB7NB60KDT4STGB7NB60KDT4
$0.72
Buy Now