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The STGB7NB60KDT4 is an N-channel PowerMESH IGBT from STMicroelectronics, packaged in a D2PAK (TO-263) surface-mount housing. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 14 A at 25°C, derating to 7 A at 100°C case temperature. The device has a maximum collector-emitter saturation voltage of 2.8 V at 15 V gate drive and 7 A. Total power dissipation is rated at 80 W at 25°C. It includes a co-packaged TurboSwitch antiparallel diode with a forward current of 7 A. Short-circuit withstand time is specified as 10 µs.
Verify the specific suffix T4 indicates tape and reel packaging containing 1000 units per reel. Confirm the component matches the exact datasheet revision date of May 2004 to ensure parameter accuracy. Check for RoHS compliance status if required by local regulations. Ensure storage conditions remain within the -55 to 150 °C range before assembly.
Select this component when a 600 V rating and 7 A continuous current are sufficient for the load. The D2PAK package requires adequate thermal management due to its junction-to-case resistance. Consider the 10 µs short-circuit protection window when designing fault detection circuits. Verify that the gate drive voltage supports the 15 V specification for optimal saturation performance.
This part belongs to the PowerMESH family designed for high-frequency operation. The 'K' suffix identifies optimization for high-frequency motor control with short-circuit withstand capabilities. It is distinct from standard variants by its integrated antiparallel diode and specific switching characteristics tailored for resonant and hard-switching environments.
Direct replacements must match the 600 V rating, 7 A current, and D2PAK footprint. Verify that any substitute also offers a 10 µs short-circuit withstand time and similar TurboSwitch diode characteristics. Cross-reference gate charge values to ensure driver compatibility without modification.