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The STGB7NC60HT4 is a very fast N-channel Insulated Gate Bipolar Transistor (IGBT) developed using advanced PowerMESH technology. It features a 600 V collector-emitter breakdown voltage and a continuous collector current of 14 A at 25°C, with a pulse current rating of 50 A. The device operates within a junction temperature range of -55°C to +150°C and is housed in a D2PAK surface-mount package. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.5 V at 15 V gate drive and 7 A collector current, a gate charge of 35 nC, and switching times of 18.5 ns turn-on and 72 ns turn-off under standard test conditions.
Verify the specific suffix 'T4' against official manufacturer documentation to confirm tape-and-reel packaging requirements. Ensure that the ordering information matches the exact part number designation to avoid discrepancies in component specifications or physical dimensions. Cross-reference datasheet revisions for any updates regarding lead modification or internal box changes prior to final procurement decisions.
Select this component when designing circuits that require high-frequency operation up to 70 kHz with minimal switching losses. The D2PAK package is suitable for surface-mount applications where thermal management and compact footprint are priorities. Consider the 2.5 V saturation voltage for efficiency calculations in low-voltage drop scenarios.
This IGBT belongs to the STGx7NC60HD family, which utilizes patented strip layout technology for high-performance applications. The 'H' suffix indicates optimization for high-frequency use, offering reduced fall times while maintaining low voltage drops. It serves as a surface-mount alternative to through-hole variants like the STGP7NC60HD within the same electrical specification family.
The STGP7NC60HD shares identical electrical ratings but uses a TO-220-3 FP through-hole package. Verify PCB layout compatibility and thermal dissipation requirements when substituting between these form factors.