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Product Detailed Parameters
- Description：IGBT 600V 20A 60W DPAK
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：30 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 5A
- Power - Max：60 W
- Switching Energy：55µJ (on), 85µJ (off)
- Input Type：Standard
- Gate Charge：19 nC
- Td (on/off) @ 25°C：17ns/72ns
- Test Condition：390V, 5A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：DPAK
- Grade：-
- Qualification：-
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Overview
The STGD10NC60KT4 is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It utilizes advanced PowerMESH technology to achieve a balance between low on-state voltage drop and fast switching performance. The device features a DPAK (TO-252) surface-mount package with three pins. Key electrical ratings include a maximum collector-emitter voltage of 600 V, a continuous collector current of 20 A at 25°C, and a maximum power dissipation of 65 W. The operating junction temperature range spans from -55°C to +150°C.
Feature Summary
- Developed using advanced PowerMESH technology for optimized trade-off between switching speed and conduction losses.
- Features a low CRES/CIES ratio to minimize susceptibility to cross-conduction in bridge configurations.
- Integrated antiparallel diode exhibits very soft ultra-fast recovery characteristics.
Applications
- Resonant or soft-switching applications
- High frequency inverters
- SMPS and PFC in hard switch topologies
Procurement Notes
Verify component authenticity through authorized channels as the part status is listed as End-of-Life. Check for limited supply availability and confirm RoHS compliance status prior to integration into new designs due to potential obsolescence constraints.
Selection Notes
Select this component for designs requiring surface-mount IGBTs with high short-circuit ruggedness. Ensure thermal management supports the specified power dissipation limits within the TO-252 package constraints. Verify gate drive requirements align with the ±20 V maximum rating.
Part Context
This device belongs to the STGx10NC60KD series of short-circuit rugged IGBTs. It shares core technological attributes with variants such as STGB10NC60KDT4 and STGP10NC60KD, differing primarily in packaging format and specific current/voltage derating curves defined by the physical housing.
Replacement Considerations
Consider STGB10NC60KDT4 for D2PAK (TO-263) footprint compatibility or STGP10NC60KD for through-hole TO-220 implementations. These alternatives maintain similar electrical specifications within the same PowerMESH family.
