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Product Detailed Parameters
- Description：IGBT 600V 25A 80W DPAK
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：25 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 7A
- Power - Max：80 W
- Switching Energy：82µJ (on), 155µJ (off)
- Input Type：Standard
- Gate Charge：34.4 nC
- Td (on/off) @ 25°C：22.5ns/116ns
- Test Condition：390V, 7A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：DPAK
- Grade：-
- Qualification：-
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Overview
The STGD14NC60KT4 is a silicon N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It utilizes the advanced PowerMESH technology to provide an optimal balance between switching performance and low on-state behavior. The device features a collector-emitter voltage rating of 600 V and a continuous collector current capability of 14 A at 25°C. It is housed in a DPAK (TO-252) surface-mount package with three terminals. Key electrical characteristics include a maximum gate-emitter voltage of ±20 V, a short-circuit withstand time of 10 μs, and a junction temperature range from -55°C to 150°C.
Feature Summary
- Advanced PowerMESH process for excellent trade-off between switching performance and low on-state behavior
- Short-circuit ruggedness with a 10 μs withstand time
- Very soft ultra-fast recovery antiparallel diode
- Low C_res / C_ies ratio to prevent cross-conduction susceptibility
Applications
- High frequency inverters
- SMPS and PFC in both hard switch and resonant topologies
- Motor drives
Procurement Notes
Verify the exact suffix 'T4' against official STMicroelectronics documentation to confirm tape-and-reel packaging specifications. Confirm RoHS compliance status through the manufacturer's latest environmental declaration. Ensure the component matches the specific DPAK pinout configuration required for the target PCB layout design.
Selection Notes
Select this IGBT for applications requiring high-frequency operation and robust short-circuit protection. The 600 V rating suits general-purpose power conversion. Consider the thermal resistance of the DPAK package for heat dissipation requirements. Evaluate the soft recovery diode characteristics if used in bridge configurations to minimize switching losses.
Part Context
This component belongs to the STGx14NC60KD series of fast IGBTs. It shares core technological features with siblings like STGB14NC60KDT4 and STGP14NC60KD, differing primarily in the surface-mount DPAK package versus tab or through-hole options. The series is designed for resonant and soft-switching applications.
Replacement Considerations
Direct substitutes within the same family include STGB14NC60KDT4 (D²PAK) and STGP14NC60KD (TO-220FP). Verify pin compatibility and thermal management differences when replacing the DPAK package with alternative form factors.
