STGD3NB60FT4

Overview

The STGD3NB60FT4 is a PowerMESH™ IGBT from STMicroelectronics, featuring an integrated antiparallel diode in a DPAK (TO-252) surface-mount package. It provides a collector-emitter voltage of 600 V and a continuous collector current of 3 A at 125°C. The device is optimized for high-frequency applications below 40 kHz, offering low on-voltage drop and short circuit rating capabilities.

Feature Summary

• Optimized for high-frequency operation with very low switching times
• Integrated fast recovery antiparallel diode
• Short circuit rated for robust protection
• High input impedance with low gate charge

Applications

• Motor controls
• Switched-mode power supplies (SMPS)
• Power factor correction (PFC) circuits

Procurement Notes

Verify the obsolete status of this component before procurement planning. Confirm that the tape and reel packaging matches the T4 suffix requirements for automated assembly processes. Ensure design-in compatibility with existing footprints and thermal management solutions.

Selection Notes

Select this model for designs requiring a compact surface-mount solution with integrated freewheeling diode functionality. The F suffix indicates optimization for frequencies under 40 kHz. Evaluate thermal resistance parameters against the specific heatsinking strategy to ensure junction temperature limits are not exceeded during operation.

Part Context

This part belongs to the PowerMESH™ IGBT family utilizing patented strip layout technology. It shares characteristics with the STGP3NB60F and STGB3NB60FD variants, differing primarily in package type and internal diode integration. The DPAK form factor facilitates automated PCB assembly compared to through-hole alternatives.

Replacement Considerations

Direct substitutes include other STMicroelectronics PowerMESH™ devices with identical pinouts and electrical ratings. Verify that replacement parts maintain the same integrated diode configuration and frequency optimization profile.