SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The STGD5NB120SZT4 is a single IGBT from the PowerMESH™ series, manufactured by STMicroelectronics. It features a maximum collector-emitter breakdown voltage of 1200 V and a continuous collector current of 10 A. The device has a maximum power dissipation of 75 W and a saturation voltage of 2 V at 15 V gate drive and 5 A collector current. Switching times are 690 ns for turn-on and 12.1 µs for turn-off under test conditions of 960 V, 5 A, 1 kΩ, and 15 V. It operates within a junction temperature range of -55°C to 150°C and is housed in a DPAK surface-mount package.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS3 compliance status and check for any Product Change Notifications (PCN) regarding assembly site or packaging updates. Ensure the part number suffix matches the required tape-and-reel configuration for automated assembly processes.
Select this component when a 1200 V rating is required for high-voltage applications. The 10 A continuous current capability suits moderate power levels. Consider the DPAK package for thermal management needs and verify that the switching speeds align with the target circuit frequency requirements.
This IGBT belongs to the STGD5 family, which utilizes Power MESH™ technology. This series is designed to balance low on-state voltage with efficient switching characteristics. The specific model integrates these features into a standard surface-mount package suitable for various industrial and consumer electronics applications.
Check for equivalent 1200 V, 10 A IGBTs in the TO-252/DPAK package. Verify pinout compatibility and ensure that switching energy values and thermal resistance parameters match the original design constraints before substitution.