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Product Detailed Parameters
- Description：IGBT 600V 15A DPAK
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：15 A
- Current - Collector Pulsed (Icm)：21 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 3A
- Power - Max：56 W
- Switching Energy：20µJ (on), 68µJ (off)
- Input Type：Standard
- Gate Charge：13.6 nC
- Td (on/off) @ 25°C：12ns/76ns
- Test Condition：390V, 3A, 10Ohm, 15V
- Reverse Recovery Time (trr)：21 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：DPAK
- Grade：-
- Qualification：-
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Overview
The STGD6NC60HDT4 is a single N-channel IGBT from the PowerMESH™ family, packaged in DPAK (TO-252-3). It features a collector-emitter voltage of 600 V and a continuous collector current of 15 A at 25°C. The saturation voltage is 2.5 V maximum at 3 A. Operating junction temperature ranges from -55°C to +150°C with a total dissipation of 56 W.
Feature Summary
- Advanced PowerMESH™ technology for optimized switching performance
- Low on-state voltage drop characteristics
- Integrated ultra-fast recovery antiparallel diode
- Designed for high frequency operation
Applications
- High frequency inverters
- SMPS and PFC in hard switch topologies
- Resonant topology converters
- Motor drivers
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging type. Confirm that the component meets required environmental standards such as RoHS compliance before finalizing procurement specifications.
Selection Notes
Select this component for applications requiring high frequency switching capabilities. Ensure thermal management design accommodates the specified power dissipation limits within the operating temperature range.
Part Context
This device belongs to the STGD6NC60HD series of very fast IGBTs. The T4 suffix indicates tape and reel packaging configuration for automated surface mount assembly processes.
Replacement Considerations
Compatible replacements include STGP6NC60HD and STGB7NC60HDT4. Verify package compatibility and electrical ratings when substituting these components.
FAQ
What is the reverse transfer capacitance value?
The reverse transfer capacitance (Cres) is 5.5 pF under test conditions of VCE = 25V and f = 1MHz.
Does the device include an integrated diode?
Yes, the device includes a very soft ultra-fast recovery antiparallel diode co-packaged with the IGBT.
What is the gate threshold voltage specification?
The gate threshold voltage (VGE(th)) has a maximum value of 5.75 V at IC = 250 µA.
