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Product Detailed Parameters
- Description：IGBT 1200V 10A 55W DPAK
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：10:00 AM
- Current - Collector Pulsed (Icm)：20 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 7A
- Power - Max：55 W
- Switching Energy：3.2µJ (on), 15mJ (off)
- Input Type：Standard
- Gate Charge：29 nC
- Td (on/off) @ 25°C：570ns/-
- Test Condition：960V, 7A, 1kOhm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：DPAK
- Grade：-
- Qualification：-
Download product information
Overview
The STGD7NB120ST4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the PowerMESH series by STMicroelectronics. It features a collector-emitter breakdown voltage of 1200 V and a maximum continuous collector current of 10 A. The device is housed in a DPAK (TO-252-3) surface-mount package. Key electrical parameters include a power dissipation rating of 55 W at 25°C and a gate-emitter maximum voltage range typically spanning ±20 V to ±30 V depending on specific operational limits. It supports a maximum operating temperature of +150°C.
Feature Summary
- Utilizes PowerMESH technology for optimized low saturation voltage characteristics
- Designed for high-voltage switching applications with robust thermal performance
- Single IGBT configuration suitable for compact circuit designs
Applications
- High-frequency power supplies
- Motor control drives
- Inverter circuits
Procurement Notes
Verify component authenticity through authorized distributors as this part number may be listed as obsolete or end-of-life. Confirm exact datasheet revision and packaging specifications prior to procurement, as availability varies significantly across supply channels. Ensure compliance with RoHS directives if required for the specific application environment.
Selection Notes
Select this component for applications requiring 1200 V blocking capability with moderate current handling up to 10 A. Consider the DPAK package constraints for thermal management and PCB layout. Evaluate alternative active models within the PowerMESH family if current production status is critical for long-term supply chain stability.
Part Context
This IGBT belongs to STMicroelectronics' PowerMESH lineup, which emphasizes reduced conduction losses. The STGD7NB120ST4 specifically targets mid-power industrial and consumer electronics applications where space efficiency and switching speed are prioritized alongside high voltage tolerance.
Replacement Considerations
Public confirmed substitute part numbers are not explicitly documented in the provided source material. Users should consult official STMicroelectronics replacement guides or contact local sales offices for compatible active alternatives.
