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Product Detailed Parameters
- Description：IGBT 600V 15A 55W DPAK
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：15 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：1.6V @ 15V, 7A
- Power - Max：55 W
- Switching Energy：3.5mJ (off)
- Input Type：Standard
- Gate Charge：33 nC
- Td (on/off) @ 25°C：700ns/-
- Test Condition：480V, 7A, 1kOhm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：DPAK
- Grade：-
- Qualification：-
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Overview
The STGD7NB60ST4 is a PowerMESH IGBT featuring a patented strip layout for low on-voltage drop. It operates at 600 V with a continuous collector current of 7 A at Tc=100°C and 5 A at Tc=25°C. The device uses a DPAK (TO-252) surface-mount package in tape & reel format. Key electrical parameters include a maximum VCE(sat) of 1.6 V at 7 A, gate threshold voltage of 2.5 to 5 V, and gate charge of 33 nC. Thermal resistance junction-to-case is 2.27 °C/W, with a maximum operating junction temperature of 150°C.
Feature Summary
- PowerMESH technology optimized for minimum on-voltage drop in low frequency applications below 1 kHz
- High input impedance with voltage-driven polysilicon gate structure
- DPAK surface-mount package available in tape and reel configuration
Applications
- Light dimmers
- Static relays
- Motor control systems
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation to confirm packaging details. Confirm that the component meets required thermal and electrical specifications for the intended application environment before finalizing procurement decisions.
Selection Notes
Select this component for low-frequency applications requiring minimal conduction losses. Ensure the design accommodates the specified thermal resistance and junction temperature limits. Verify compatibility with standard gate drive voltages and switching frequencies within the device's operational range.
Part Context
This part belongs to the STMicroelectronics PowerMESH IGBT family, which utilizes advanced high-voltage technology based on a patented strip layout. The 'S' suffix identifies devices optimized for achieving minimum on-voltage drop specifically for low-frequency applications.
Replacement Considerations
Check datasheets for alternative IGBTs with matching 600 V ratings and similar DPAK packages. Verify equivalent current capabilities and thermal characteristics to ensure functional compatibility in existing designs.
