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Product Detailed Parameters
- Description：IGBT 600V 16A TO-220FP
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：16 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 12A
- Power - Max：32 W
- Switching Energy：85µJ (on), 189µJ (off)
- Input Type：Standard
- Gate Charge：53 nC
- Td (on/off) @ 25°C：25ns/97ns
- Test Condition：390V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr)：31 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220FP
- Grade：-
- Qualification：-
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Overview
The STGF19NC60HD is an N-channel Insulated Gate Bipolar Transistor (IGBT) from the PowerMESH family, designed for high-frequency applications. It features a collector-emitter voltage of 600 V and a continuous collector current of 16 A at 25 °C in a TO-220AB package. The device integrates a built-in ultra-fast recovery antiparallel diode with an RMS forward current of 20 A. Key electrical parameters include a maximum gate-emitter voltage of ±20 V and a gate threshold voltage maximum of 5.75 V. The component utilizes a flange mount configuration with isolated case connection.
Feature Summary
- Advanced PowerMESH technology providing an optimized balance between low on-state voltage drop and switching performance
- Very soft ultra-fast recovery integrated antiparallel diode to minimize reverse recovery losses
- Low CRES/CIES ratio design to reduce susceptibility to cross-conduction events
Applications
- High frequency motor controls
- Switching Mode Power Supplies (SMPS)
- Power Factor Correction (PFC) circuits
- Resonant converter topologies
Procurement Notes
Verify the obsolete status of the STGF19NC60HD before procurement planning. Confirm availability through authorized distributors or secondary markets. Ensure compatibility with existing thermal management solutions given the TO-220AB package constraints. Validate that the specific suffix 'F' meets all mechanical and electrical requirements for the target assembly.
Selection Notes
Select this component for designs requiring very fast switching speeds combined with low conduction losses. The PowerMESH technology ensures efficient operation in hard-switched and resonant topologies. Consider the 600 V rating for medium-voltage AC/DC conversion systems. Evaluate the thermal resistance characteristics against the expected junction temperature limits under continuous load conditions.
Part Context
The STGF19NC60HD belongs to the STMicroelectronics PowerMESH IGBT family, which employs patented strip layout technology. This series is characterized by high-frequency optimization, indicated by the 'H' suffix in related models like STGP19NC60HD. The family targets applications demanding superior trade-offs between switching speed and on-state behavior.
Replacement Considerations
Public confirmed substitutes include STGP19NC60HD and STGW19NC60HD. These variants share identical electrical ratings and functional characteristics within the same PowerMESH family. Verify package compatibility and pinout alignment during replacement integration.
