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The STGF19NC60WD is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It utilizes the advanced PowerMESH technology to provide an optimal balance between switching performance and low on-state behavior. The device features a collector-emitter voltage rating of 600 V and a continuous collector current of 19 A at 25°C. It is housed in a TO-220AB package with three leads, designed for through-hole mounting. The component operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix 'F' against official STMicroelectronics documentation to confirm the exact pinout and thermal characteristics, as variations exist within the series. Confirm RoHS compliance status directly from the manufacturer's datasheet or authorized distributor declarations before integration into regulated designs.
Select this component for applications requiring high-frequency operation and robust switching capabilities. Ensure the design accommodates the 600V blocking voltage and 19A current limits under expected thermal conditions. Verify that the TO-220AB package fits the mechanical constraints of the target PCB layout.
This IGBT belongs to the STMicroelectronics PowerMESH family, which emphasizes efficiency in power conversion. The 'W' series typically denotes specific packaging or speed grades, while the 'F' indicates the TO-220AB form factor. It serves as a core switching element in medium-power electronic systems.
Potential substitutes include the STGW19NC60HD and STGP19NC60KD. Verify electrical ratings and pin compatibility carefully, as package types and specific switching speeds may differ between these models and the STGF19NC60WD.