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Product Detailed Parameters
- Description：IGBT 1200V 6A TO-220FP
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：6:00 AM
- Current - Collector Pulsed (Icm)：20 A
- Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 3A
- Power - Max：25 W
- Switching Energy：236µJ (on), 290µJ (off)
- Input Type：Standard
- Gate Charge：24 nC
- Td (on/off) @ 25°C：15ns/118ns
- Test Condition：800V, 3A, 10Ohm, 15V
- Reverse Recovery Time (trr)：51 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220FP
- Grade：-
- Qualification：-
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Overview
The STGF3NC120HD is a single N-channel IGBT manufactured by STMicroelectronics, utilizing advanced PowerMESH technology for high-frequency applications. It features a collector-emitter voltage (VCEO) of 1200 V and a continuous collector current (Ic) of 6 A at 25°C. The device operates within a temperature range of -55°C to +150°C, with a maximum power dissipation (Pd) of 25 W. Key electrical parameters include a collector-emitter saturation voltage (VceSAT) of 2.8 V and a maximum gate-emitter voltage (VGEO) of ±20 V. Packaged in a TO-220-3 FP through-hole housing, it offers a switching speed capability of 1 MHz.
Feature Summary
- Optimized for high-frequency applications via reduced fall time while maintaining low voltage drop
- Provides excellent trade-off between switching performance and low on-state behavior
- Features very soft ultra-fast recovery antiparallel diode
Applications
- Soft switching applications
- High frequency power conversion circuits
Procurement Notes
Verify the specific suffix and package variant against official datasheets before ordering. Confirm thermal management requirements align with the 25 W power dissipation rating. Ensure gate drive voltages remain within the ±20 V limit to prevent damage. Check for RoHS compliance documentation if required by your manufacturing standards.
Selection Notes
Select this component when a 1200 V blocking capability is required alongside moderate current handling. The TO-220-3 FP package suits through-hole designs needing robust mechanical mounting. Consider the 2.8 V saturation voltage for conduction loss calculations in low-to-medium power topologies.
Part Context
This part belongs to STMicroelectronics' PowerMESH IGBT family, identified by the 'H' suffix indicating optimization for high-frequency use. It complements higher current variants like the STGP3NC120HD and STGB3NC120HDT4, offering a specialized solution for applications prioritizing switching speed over raw current capacity.
Replacement Considerations
Direct substitutes within the same family include STGP3NC120HD for higher current needs or STGB3NC120HDT4 for surface mount requirements. Verify pinout compatibility and thermal resistance differences when cross-referencing with other manufacturers' 1200 V IGBTs.
