STGFW30H65FB

STGFW30H65FB

$1.04
  • Description:IGBT TRENCH FS 650V 60A TO-3PF-3
  • Series:-

SKU:ecf326d80e77 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 650V 60A TO-3PF-3
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):60 A
  • Current - Collector Pulsed (Icm):120 A
  • Vce(on) (Max) @ Vge, Ic:2V @ 15V, 30A
  • Power - Max:58 W
  • Switching Energy:151µJ (on), 293µJ (off)
  • Input Type:Standard
  • Gate Charge:149 nC
  • Td (on/off) @ 25°C:37ns/146ns
  • Test Condition:400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-3PFM, SC-93-3
  • Supplier Device Package:TO-3PF-3
  • Grade:-
  • Qualification:-

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STGFW30H65FB

Overview

The STGFW30H65FB is a high-speed IGBT from the HB2 series, utilizing an advanced trench gate field-stop structure. It features a 650 V collector-emitter voltage rating and a 30 A continuous collector current. The device operates with a maximum junction temperature of 175 °C and exhibits a typical saturation voltage of 1.65 V at 30 A. It incorporates a very fast soft-recovery antiparallel diode to minimize switching losses and tail current. The component is housed in a TO-247 long package, providing low thermal resistance for efficient heat dissipation in power conversion applications.

Feature Summary

  • Advanced trench gate field-stop technology for optimized conduction and switching performance
  • Integrated very fast soft-recovery antiparallel diode for reduced switching energy
  • Positive VCE(sat) temperature coefficient enabling safer parallel operation
  • Tight parameter distribution ensuring consistent performance across devices

Applications

  • High-frequency frequency converters and inverters
  • Switched-mode power supplies (SMPS)
  • Induction heating systems
  • Motor drive applications requiring high efficiency

Procurement Notes

Verify the exact ordering code against the manufacturer's official datasheet to ensure compatibility with the specific suffix requirements. Confirm that the requested variant matches the intended electrical specifications and packaging type before finalizing procurement orders to avoid integration errors.

Selection Notes

Select this component for designs prioritizing high switching frequencies and minimized total losses. The HB2 series offers a balance between conduction and switching characteristics. Ensure the thermal management solution supports the 175 °C junction temperature limit and consider the tight parameter distribution benefits for paralleling multiple units in higher current configurations.

Part Context

This IGBT belongs to STMicroelectronics' HB2 series, representing an evolution of the trench gate field-stop technology. It is designed to maximize efficiency in frequency converters by optimizing the trade-off between conduction and switching losses. The series is characterized by low saturation voltage and minimized tail current, making it suitable for modern high-performance power electronics.

Replacement Considerations

Direct replacements within the same family include the STGWA30HP65FB2 and STGF30H65DFB2. Verify pinout compatibility and thermal interface requirements when substituting. The STGWT30HP65FB is an older generation equivalent but may exhibit different switching characteristics.

STGFW30H65FBSTGFW30H65FB
$1.04
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