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The STGFW80V60F is a Trench Gate Field-Stop IGBT from the V series, manufactured by STMicroelectronics. It features a TO-3PF package and supports through-hole mounting. The device has a maximum collector-emitter voltage of 600 V and a continuous collector current of 80 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.8 V, a gate-emitter leakage current of 250 nA, and a power dissipation rating of 283 W. It operates within a temperature range of -55°C to +175°C.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm package integrity and pin alignment upon receipt. Check for end-of-life status as indicated in termination notifications. Ensure storage conditions maintain moisture sensitivity levels prior to soldering. Validate datasheet revisions against specific production batches.
Choose this component for applications requiring high current handling and fast switching speeds. The TO-3PF package suits high-power thermal management needs. Compare saturation voltage and current ratings against system requirements. Consider thermal resistance characteristics for heatsink design. Evaluate gate drive compatibility with standard logic levels.
This IGBT belongs to STMicroelectronics' V series, characterized by trench gate field-stop architecture. It complements other devices like the STGFW20V60DF and STGB40V60F within the same product family. The series targets efficient power conversion in demanding industrial environments.
Public confirmed substitute part numbers are not available in the provided documentation.