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The STGP10NC60KD is a silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It utilizes the PowerMESH technology to balance switching performance and on-state behavior. The device features a single configuration in a TO-220-3 through-hole package. Key electrical parameters include a maximum collector-emitter voltage of 600 V, a continuous collector current of 8 A at 25°C, and a power dissipation of 56 W. It operates within a temperature range of -55°C to +150°C.
Verify the specific suffix 'KD' against official datasheets to confirm short-circuit ruggedness specifications. Ensure the TO-220-3 package matches thermal management requirements. Confirm RoHS compliance status via manufacturer documentation before integration.
Select this component for designs requiring high short-circuit tolerance up to 10 μs. The 600 V rating suits medium-voltage AC/DC converters. Evaluate thermal resistance for the TO-220-3 package under expected load conditions.
This part belongs to the STGP series of IGBTs from STMicroelectronics. The 'K' suffix typically denotes short-circuit rugged variants within the family. It is designed for general-purpose power switching where reliability under fault conditions is critical.
STGP10NB60SD offers similar voltage ratings but differs in saturation voltage and current handling. Verify pinout compatibility and thermal characteristics when substituting.