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Product Detailed Parameters
- Description：IGBT 600V 40A TO-220
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 12A
- Power - Max：130 W
- Switching Energy：85µJ (on), 189µJ (off)
- Input Type：Standard
- Gate Charge：53 nC
- Td (on/off) @ 25°C：25ns/97ns
- Test Condition：390V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr)：31 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The STGP19NC60HD is a very fast N-channel Insulated Gate Bipolar Transistor (IGBT) developed using advanced PowerMESH technology. It features an integrated ultra-fast recovery antiparallel diode and is rated for a collector-emitter voltage of 600 V with a continuous collector current of 19 A at 25 °C case temperature. The device operates within a junction temperature range of -55 °C to +150 °C and offers low on-state voltage drop characteristics.
Feature Summary
- Advanced PowerMESH technology ensures excellent trade-off between switching performance and low on-state behavior
- Very soft ultra-fast recovery antiparallel diode minimizes switching losses and electromagnetic interference
- Optimized for high-frequency applications with reduced fall time while maintaining low voltage drop
Applications
- High frequency motor controls
- Switching Mode Power Supplies (SMPS)
- Power Factor Correction (PFC) circuits in hard switch topologies
- Resonant converter topologies
Procurement Notes
Verify the specific suffix 'P' indicates the TO-247 package variant when sourcing. Confirm RoHS compliance status as manufacturing sites may vary. Check for obsolete status updates from STMicroelectronics before finalizing component selection for new designs.
Selection Notes
Select this component for applications requiring high switching speeds and low conduction losses. Ensure thermal management design accounts for the specified thermal resistance values. Verify gate drive requirements align with the ±20 V maximum gate-emitter voltage rating to prevent device damage.
Part Context
This part belongs to the STGP series of PowerMESH IGBTs, designed for high-performance power conversion. It shares core electrical characteristics with the STGF19NC60HD and STGW19NC60HD models, differing primarily in packaging configurations such as TO-220AB or TO-247.
Replacement Considerations
Direct substitutes include STGF19NC60HD and STGW19NC60HD. Verify pinout compatibility and thermal resistance differences between TO-220AB and TO-247 packages before substitution.
