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Product Detailed Parameters
- Description：IGBT 600V 60A TO-220
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
- Power - Max：200 W
- Switching Energy：220µJ (on), 330µJ (off)
- Input Type：Standard
- Gate Charge：100 nC
- Td (on/off) @ 25°C：31ns/100ns
- Test Condition：390V, 20A, 3.3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The STGP20NC60V is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 30 A at 25 °C. The device utilizes the PowerMESH™ process for optimized performance. Key electrical parameters include a collector-emitter saturation voltage of 2.5 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 200 W. It operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- Utilizes advanced PowerMESH™ process technology
- Enables high frequency operation up to 50 kHz
- Features low CRES/CIES ratio to prevent cross-conduction susceptibility
Applications
- High frequency converters
- Resonant or soft-switching applications
- Induction heating systems
Procurement Notes
Verify the specific datasheet revision and ordering suffix when sourcing components. Confirm that the package type matches the TO-247-3 footprint requirements for your PCB layout. Ensure thermal management solutions are adequate for the specified power dissipation limits under actual operating conditions.
Selection Notes
Select this component for designs requiring a balance between switching speed and conduction losses. The low CRES/CIES ratio makes it suitable for hard-switching topologies where cross-conduction risks exist. Verify that the 600 V rating provides sufficient margin for your circuit's peak voltage stresses.
Part Context
This IGBT belongs to the NC series from STMicroelectronics, designed for general-purpose industrial applications. It shares architectural similarities with other devices in the family but is distinguished by its specific current and voltage ratings. The PowerMESH™ technology differentiates it from older planar gate technologies.
Replacement Considerations
Direct pin-compatible substitutes may include the STGW20NC60VD or STGD10NC60KDT4, though parameter differences such as current rating and short-circuit ruggedness must be evaluated against the original design requirements.
