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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 60A TO-220
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 30A
- Power - Max：260 W
- Switching Energy：350µJ (on), 400µJ (off)
- Input Type：Standard
- Gate Charge：105 nC
- Td (on/off) @ 25°C：50ns/160ns
- Test Condition：400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The STGP30H65F is a high-voltage Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It utilizes the Trench Field-Stop (TFS) technology to achieve low conduction and switching losses, making it suitable for hard-switching applications. The device features an isolated collector terminal for simplified thermal management and gate drive isolation. It is designed for robust operation in industrial motor drives and power conversion systems requiring high efficiency and reliability under demanding electrical conditions.
Feature Summary
- Trench Field-Stop (TFS) technology for optimized switching performance
- Isolated collector tab for enhanced thermal dissipation and safety
- High short-circuit ruggedness for system protection
Applications
- Industrial motor drives and inverters
- Switched-mode power supplies (SMPS)
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the specific ordering suffix to confirm package type and tape/reel specifications. Ensure the component meets required automotive or industrial qualification standards if applicable. Cross-reference the datasheet revision date with your design timeline to confirm parameter stability and end-of-life status before finalizing procurement.
Selection Notes
Select this IGBT based on voltage ratings matching the DC bus voltage and current requirements of the load. Consider the thermal resistance characteristics for heatsink design. Evaluate the switching speed trade-offs between conduction loss and electromagnetic interference (EMI) generated during hard-switching operations in the target application circuit.
Part Context
This component belongs to STMicroelectronics' high-power IGBT portfolio, specifically leveraging TFS technology. It is part of a family designed to replace older planar technologies in medium-power applications. The STGP series is engineered for cost-effective solutions in industrial and consumer power electronics where efficiency and ruggedness are critical.
Replacement Considerations
Direct pin-compatible replacements may include other ST TFS IGBTs with similar voltage and current ratings, such as the STGP30HC66D. Verify that alternative devices match the specific Vce(sat), switching times, and thermal characteristics required by the existing board layout and cooling solution.
