STGP3NB60HD

$1.02

Description：IGBT 600V 10A TO-220
Series：PowerMESH™

SKU:0b013b9d189c Category: Single IGBTs Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 10A TO-220
Series：PowerMESH™
Mfr：STMicroelectronics
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：10:00 AM
Current - Collector Pulsed (Icm)：24 A
Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 3A
Power - Max：50 W
Switching Energy：33µJ (off)
Input Type：Standard
Gate Charge：21 nC
Td (on/off) @ 25°C：5ns/53ns
Test Condition：480V, 3A, 10Ohm, 15V
Reverse Recovery Time (trr)：45 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220
Grade：-
Qualification：-

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STGP3NB60HD

Overview

The STGP3NB60HD is a PowerMESH™ IGBT from STMicroelectronics, designed for high-frequency applications up to 50kHz. It features a collector-emitter voltage (Vces) of 600 V and a maximum saturation voltage (Vce(sat)) of less than 2.8 V at 25°C. The device supports a continuous collector current of 10 A at 25°C and 6 A at 100°C. It incorporates a co-packaged TurboSwitch™ antiparallel diode with a forward current rating of 3 A. Thermal resistance from junction to case is 2.5 °C/W in the TO-220 package.

Feature Summary

Optimized for high-frequency operation up to 50kHz using patented strip layout technology
Co-packaged with TurboSwitch™ antiparallel diode for reduced switching losses
High input impedance with low gate charge characteristics

Applications

High frequency motor controls
SMPS and PFC in hard switch topologies
Resonant converter topologies

Procurement Notes

Verify component authenticity through authorized channels as this part is marked obsolete. Confirm package type matches design requirements since variants exist in TO-220, TO-220FP, and D2PAK. Check datasheet revisions for updated thermal and electrical limits before finalizing integration into new designs.

Selection Notes

Select based on required switching frequency and thermal management capabilities. Ensure gate drive voltage aligns with the specified 15 V test conditions for optimal Vce(sat). Consider the TO-220FP variant if lower thermal resistance is needed compared to standard TO-220 packaging.

Part Context

This component belongs to the PowerMESH™ IGBT family characterized by low conduction and switching losses. The 'H' suffix specifically denotes optimization for high-frequency performance with reduced fall time while maintaining low voltage drop. It serves as a discrete solution for power conversion circuits requiring efficient switching.