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Product Detailed Parameters
- Description：IGBT 600V 14A TO-220
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：14 A
- Current - Collector Pulsed (Icm)：56 A
- Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 7A
- Power - Max：80 W
- Switching Energy：85µJ (off)
- Input Type：Standard
- Gate Charge：42 nC
- Td (on/off) @ 25°C：15ns/75ns
- Test Condition：480V, 7A, 10Ohm, 15V
- Reverse Recovery Time (trr)：100 ns
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The STGP7NB60HD is a 600 V, 7 A N-channel PowerMESH IGBT designed for high-frequency applications up to 120 kHz. It features a low on-voltage drop (VCE(sat) < 2.8 V at 15 V gate drive), low gate charge (42 nC typical), and high current capability. The device is co-packaged with a TurboSwitch antiparallel diode optimized for fast recovery. Available in TO-220 and TO-220FP packages, it supports junction temperatures up to 150 °C and includes tail current losses in off-state specifications.
Feature Summary
- PowerMESH technology providing excellent trade-off between switching performance and low on-state behavior
- TurboSwitch antiparallel diode integrated for very soft ultra-fast recovery characteristics
- Low CRES/CIES ratio ensuring no cross-conduction susceptibility
Applications
- High frequency motor controls
- SMPS and PFC in both hard switch topologies
- Resonant converter topologies
Procurement Notes
Verify the specific package variant required, as the STGP7NB60HD designation covers both standard TO-220 and flat-pack (TO-220FP) configurations. Confirm availability status, as this component may be classified as obsolete or end-of-life by the manufacturer. Ensure that the selected replacement part maintains compatibility with existing thermal management solutions and PCB footprint dimensions.
Selection Notes
Select this component for designs requiring efficient operation above 1 kHz and up to 120 kHz. The low gate charge reduces driver power requirements, while the integrated antiparallel diode simplifies circuit design by eliminating external freewheeling components. Consider thermal resistance values when designing heatsinking for continuous currents near the 7 A limit.
Part Context
This IGBT belongs to the PowerMESH family developed using patented strip layout technology. The 'H' suffix specifically identifies devices optimized for very low switching times suitable for high-frequency environments. It represents an evolution in silicon technology aimed at balancing conduction losses with rapid switching transitions.
Replacement Considerations
STGP7NC60HD
FAQ
What does the 'H' suffix indicate in the model number?
The 'H' suffix identifies the family of IGBTs optimized to achieve very low switching times for high-frequency applications operating below 120 kHz.
How are switching losses defined in the datasheet?
Turn-off switching losses include tail current contributions according to JEDEC standardization, and total switching losses also incorporate recovery losses from the integrated antiparallel diode.
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCES) is rated at 600 V with the gate-emitter voltage set to 0 V.
