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Product Detailed Parameters
- Description：IGBT 600V 15A TO-220
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：15 A
- Current - Collector Pulsed (Icm)：30 A
- Vce(on) (Max) @ Vge, Ic：2.75V @ 15V, 3A
- Power - Max：65 W
- Switching Energy：55µJ (on), 85µJ (off)
- Input Type：Standard
- Gate Charge：19 nC
- Td (on/off) @ 25°C：17ns/72ns
- Test Condition：390V, 3A, 10Ohm, 15V
- Reverse Recovery Time (trr)：23.5 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The STGP8NC60KD is a silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It features a 600 V collector-emitter voltage rating and an 8 A continuous collector current at 25 °C case temperature. The device utilizes advanced PowerMESH technology to balance switching performance with low on-state behavior. Key electrical characteristics include a short-circuit withstand time of 10 μs and a co-packaged ultra-fast freewheeling diode.
Feature Summary
- Advanced PowerMESH technology ensures excellent trade-off between switching performance and low on-state behavior
- Short-circuit rugged design with 10 μs withstand capability
- Co-packaged with very soft ultra-fast recovery antiparallel diode
- Low CRES/CIES ratio eliminates cross-conduction susceptibility
Applications
- Resonant converters
- Soft-switching applications
- High frequency inverters
Procurement Notes
Verify the specific ordering suffix against official STMicroelectronics documentation to confirm package type and tape-and-reel specifications. Ensure the component matches the required short-circuit ruggedness for the target circuit topology. Cross-reference datasheet revision dates to confirm parameter consistency during procurement.
Selection Notes
Select this IGBT for designs requiring high-frequency operation with soft-switching techniques. The integrated fast recovery diode simplifies circuit layout in resonant topologies. Verify that the 10 μs short-circuit withstand time aligns with the protection scheme of the driving gate circuitry.
Part Context
This component belongs to the PowerMESH family of IGBTs, which are optimized for high-efficiency power conversion. The 'KD' suffix typically denotes specific packaging or diode integration variants within the 600 V series. It serves as a discrete solution for medium-power industrial and consumer applications.
Replacement Considerations
Direct replacements must match the 600 V rating, 8 A current capacity, and TO-247/TO-220FP package dimensions. Verify equivalent short-circuit ruggedness and diode recovery characteristics when substituting with other manufacturers' devices.
