STGSB200M65DF2AG

STGSB200M65DF2AG

$18.15
  • Description:IGBT TRENCH FS 650V 216A 9ACEPAK
  • Series:-

SKU:620e2dafcd26 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 650V 216A 9ACEPAK
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Bulk
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):216 A
  • Current - Collector Pulsed (Icm):700 A
  • Vce(on) (Max) @ Vge, Ic:2.05V @ 15V, 200A
  • Power - Max:714 W
  • Switching Energy:3.82mJ (on), 6.97mJ (off)
  • Input Type:Standard
  • Gate Charge:554 nC
  • Td (on/off) @ 25°C:122ns/250ns
  • Test Condition:400V, 200A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr):174.5 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:9-PowerSMD
  • Supplier Device Package:9-ACEPACK SMIT
  • Grade:Automotive
  • Qualification:AEC-Q101

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STGSB200M65DF2AG

Overview

The STGSB200M65DF2AG is an automotive-grade trench gate field-stop IGBT from the M series, rated at 650 V and 200 A. It utilizes a proprietary structure to balance inverter performance with low-loss operation and short-circuit functionality. Key electrical parameters include a typical collector-emitter saturation voltage (VCE(sat)) of 1.65 V at IC = 200 A and a maximum junction temperature (TJ) of 175 °C. The device features a minimum short-circuit withstand time of 6 μs, tight parameter distribution for safer paralleling, and a positive VCE(sat) temperature coefficient. It is housed in an ACEPACK SMIT package with a DBC substrate, offering low thermal resistance and an isolation rating of 3400 Vrms/min.

Feature Summary

  • Automotive-grade qualification compliant with AEC-Q101 standards
  • Advanced trench gate field-stop structure for optimized efficiency
  • ACEPACK SMIT surface mounting package with isolated top-side thermal pad
  • Positive VCE(sat) temperature coefficient enabling safe parallel operation

Applications

  • Automotive traction inverters
  • On-board chargers (OBC)
  • DC-DC converters for electric vehicles

Procurement Notes

Verify component authenticity through authorized STMicroelectronics distributors or direct channels. Confirm the specific ordering suffix matches the required package and qualification level. Check current product status as automotive components may undergo lifecycle transitions. Ensure storage conditions comply with moisture sensitivity levels specified in the datasheet prior to assembly.

Selection Notes

Select this component for high-power automotive applications requiring robust short-circuit capability and efficient thermal management. The 200 A rating and 650 V blocking voltage suit high-current inverter designs. Consider the ACEPACK SMIT package for its low thermal resistance and surface-mount convenience. Verify that the system design accommodates the 175 °C maximum junction temperature and 6 μs short-circuit withstand time constraints.

Part Context

This IGBT belongs to STMicroelectronics' M series, designed for optimal balance between inverter system performance and efficiency. The series emphasizes low-loss characteristics and essential short-circuit functionality for demanding power electronics applications. The device integrates advanced semiconductor technology with specialized packaging to meet rigorous automotive reliability standards.

Replacement Considerations

Direct replacements within the same family include other M series IGBTs with similar voltage and current ratings, such as the STGSB150M65DF2AG or STGSB120M65DF2AG, provided pinout and thermal interface compatibility are verified. Cross-package substitutions require careful evaluation of thermal resistance and mechanical fit.

STGSB200M65DF2AGSTGSB200M65DF2AG
$18.15
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