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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 145A TO-247
- Series：HB2
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：145 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 100A
- Power - Max：441 W
- Switching Energy：1.06mJ (on), 1.14mJ (off)
- Input Type：Standard
- Gate Charge：288 nC
- Td (on/off) @ 25°C：23ns/141ns
- Test Condition：400V, 100A, 3.3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-4
- Supplier Device Package：TO-247-4
- Grade：-
- Qualification：-
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Overview
The STGW100H65FB2-4 is a high-speed IGBT from the HB2 series, utilizing an advanced trench gate field-stop structure. It features a 650 V collector-emitter voltage and a continuous collector current of 145 A at 25 °C case temperature. The device operates with a maximum junction temperature of 175 °C and exhibits a typical saturation voltage of 1.55 V at 100 A. Packaged in a TO247-4 format with four pins including a dedicated Kelvin emitter pin for improved switching performance, it offers low thermal resistance (RthJC of 0.34 °C/W) and minimized tail current.
Feature Summary
- Advanced trench gate field-stop structure optimized for conduction and switching energy reduction
- Dedicated Kelvin pin separates power path from driving signal to enhance switching performance
- Positive VCE(sat) temperature coefficient ensures safe paralleling operation
- Tight parameter distribution supports reliable parallel configurations
Applications
- Welding equipment
- Power factor correction circuits
- Uninterruptible power supplies (UPS)
- Solar inverters
- Battery chargers
Procurement Notes
Verify the specific ordering code STGW100H65FB2-4 against the manufacturer's official documentation to confirm current product status and availability. Ensure that the required packaging type matches the project specifications, as packing formats may vary by region or production batch. Cross-reference the datasheet revision history to ensure all electrical characteristics and package dimensions align with the latest engineering standards before finalizing procurement orders.
Selection Notes
Select this component for applications requiring high efficiency in fast switching environments. The HB2 series optimization provides superior performance at low current values compared to previous generations. Consider the thermal management requirements based on the specified junction-to-case thermal resistance when designing heat sinks. The inclusion of the Kelvin pin necessitates appropriate PCB layout practices to fully utilize its switching benefits.
Part Context
This device belongs to the STPOWER HB2 series of IGBTs, representing an evolution of the proprietary trench gate field-stop technology. It is designed to maximize efficiency across a wide range of high-frequency applications. The series focuses on balancing conduction losses and switching energy to deliver optimal performance in modern power conversion systems.
Replacement Considerations
Direct replacements within the same family include STGWA100H65DFB2 and STGW75H65DFB2-4. Verify pin compatibility and electrical ratings before substitution. Note that some variants may lack the integrated diode or differ in package lead configuration.
