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Product Detailed Parameters
- Description：IGBT TRENCH FS 1250V 40A TO-247
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1250 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 15A
- Power - Max：259 W
- Switching Energy：410µJ (off)
- Input Type：Standard
- Gate Charge：68 nC
- Td (on/off) @ 25°C：-/106ns
- Test Condition：600V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The STGW20IH125DF is a 1250 V, 20 A IGBT from the IH series, utilizing an advanced trench gate field-stop structure. It features a co-packaged freewheeling diode with low forward voltage drop and soft recovery characteristics. The device is optimized for conduction and switching losses, specifically designed for resonant and soft-switching applications. Key electrical parameters include a maximum junction temperature of 175°C, a typical collector-emitter saturation voltage (VCE(sat)) of 2.0 V at IC = 15 A, and minimized tail current to enhance efficiency in soft commutation scenarios.
Feature Summary
- Advanced trench gate field-stop structure for optimized performance
- Co-packaged freewheeling diode with low forward voltage drop
- Designed exclusively for soft commutation applications
- Tight parameter distribution enabling safe paralleling
Applications
- Resonant converter designs
- Soft-switching power supply topologies
- High-efficiency industrial power conversion systems
Procurement Notes
Verify the specific ordering suffix and package variant against the manufacturer's latest datasheet before procurement. Confirm that the application environment strictly adheres to soft commutation requirements, as hard switching may exceed device limits. Ensure thermal management solutions are compatible with the specified package type and maximum junction temperature ratings to maintain reliability.
Selection Notes
Select this component for applications requiring high voltage blocking capability combined with low switching losses in resonant topologies. The tight parameter distribution supports parallel operation for higher current demands. Verify that the system design utilizes soft-switching techniques to leverage the minimized tail current and avoid excessive stress on the IGBT during turn-off transitions.
Part Context
This part belongs to STMicroelectronics' IH series of trench gate field-stop IGBTs. The series focuses on maximizing efficiency in high-frequency converters through optimized trade-offs between conduction and switching losses. The co-packaged diode configuration simplifies circuit design by integrating complementary switching elements into a single module.
Replacement Considerations
Direct substitutes within the same series include STGWT20IH125DF and STGWT28IH125DF, which share similar structural technologies but differ in current ratings. Cross-series replacements like STGW28IH125DF offer comparable voltage ratings but require verification of current handling and thermal characteristics.
