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Product Detailed Parameters
- Description：IGBT 600V 60A TO-247-3
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
- Power - Max：200 W
- Switching Energy：220µJ (on), 330µJ (off)
- Input Type：Standard
- Gate Charge：100 nC
- Td (on/off) @ 25°C：31ns/100ns
- Test Condition：390V, 20A, 3.3Ohm, 15V
- Reverse Recovery Time (trr)：44 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The STGW20NC60VD is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It utilizes the Power MESH™ process to balance switching performance and low on-state behavior. Key electrical ratings include a collector-emitter voltage of 600 V, a continuous collector current of 30 A at 25°C, and a maximum power dissipation of 200 W. The device features a saturation voltage of 2.5 V and operates within a junction temperature range of -55°C to +150°C. It is housed in a TO-247-3 through-hole package.
Feature Summary
- Utilizes advanced Power MESH™ technology for optimized trade-off between switching speed and conduction losses
- Integrated ultra-fast recovery antiparallel diode with soft recovery characteristics
- Capable of high-frequency operation up to 50 kHz
Applications
- High frequency motor controls
- Switched-mode power supplies (SMPS)
- Power factor correction (PFC) circuits
Procurement Notes
Verify component authenticity by checking the manufacturer's marking code against official datasheets. Confirm the specific suffix matches the requested variant, as packaging or thermal characteristics may differ. Request original manufacturer documentation to ensure compliance with RoHS standards and operational limits before integration into production designs.
Selection Notes
Select this component when a 600 V rating and 30 A continuous current are required in a TO-247-3 package. Ensure the application supports the specified 200 W power dissipation limit at the intended case temperature. Verify that the gate drive circuitry accommodates the ±20 V maximum gate-emitter voltage specification for reliable switching.
Part Context
This IGBT belongs to the STGW series from STMicroelectronics, designed for general-purpose power switching applications. The series leverages trench gate technology to enhance efficiency. The STGW20NC60VD specifically targets medium-power converters requiring robust performance in industrial and consumer electronics environments.
Replacement Considerations
Direct substitutes include the STGP20NC60V. Verify pin compatibility and thermal resistance values before substitution. Ensure the alternative part meets the same 600 V and 30 A specifications for equivalent circuit performance.
