ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 40A TO-247
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 20A
- Power - Max：167 W
- Switching Energy：200µJ (on), 130µJ (off)
- Input Type：Standard
- Gate Charge：116 nC
- Td (on/off) @ 25°C：38ns/149ns
- Test Condition：400V, 20A, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
Download product information
Overview
The STGW20V60F is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the V series, manufactured by STMicroelectronics. It utilizes TrenchGate FieldStop technology to achieve high-speed switching capabilities. The device is housed in a TO-247-3 through-hole package and supports a maximum collector-emitter voltage (VCEO) of 600 V. It features a continuous collector current (Ic) of 20 A at 25°C, with a peak pulsed current capability of 40 A. The saturation voltage (VCE(sat)) is specified at 1.8 V, and the maximum power dissipation (Pd) reaches 167 W. Operating temperatures range from -55°C to +175°C.
Feature Summary
- TrenchGate FieldStop technology for optimized trade-off between conduction and switching losses
- High-speed switching performance suitable for high-frequency converters
- Positive VCE(sat) temperature coefficient enabling safer paralleling operation
Applications
- High frequency operation up to 50 kHz
- Motor control applications
- Switched-mode power supplies (SMPS)
- Induction heating systems
Procurement Notes
Verify component authenticity against official STMicroelectronics datasheets. Confirm RoHS compliance status via manufacturer documentation. Ensure ordering suffixes match required specifications without altering electrical function. Cross-reference part numbers with authorized distributors to avoid counterfeit risks.
Selection Notes
Select this IGBT for designs requiring high efficiency at elevated switching frequencies. The TO-247-3 package facilitates effective thermal management for power levels up to 167 W. Consider the 1.8 V saturation voltage for low conduction loss requirements. Verify gate drive compatibility with the ±20 V maximum rating.
Part Context
This component belongs to the STMicroelectronics V series of discrete IGBTs. It represents an evolution in trench-gate field-stop technology, offering improved performance over previous generations. The STGW20V60F is designed to replace older models like the STGP20V60F in modern high-efficiency power conversion circuits.
Replacement Considerations
The STGP20V60F serves as a direct functional substitute within the same family, though it utilizes a TO-220-3 package instead of TO-247-3. Both devices share identical electrical ratings including 600 V blocking voltage and 20 A continuous current.
