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The STGW25H120F2 is a single IGBT from the H series, utilizing an advanced trench gate field-stop structure. It features a 1200 V collector-emitter voltage rating and a 25 A continuous collector current at 25°C. The device operates within a junction temperature range of -55°C to +175°C. Key electrical parameters include a typical saturation voltage of 2.1 V at 25 A, a maximum power dissipation of 375 W, and a short-circuit withstand time of 5 μs at 150°C. It is housed in a TO-247-3 through-hole package.
Verify component authenticity by checking the manufacturer's marking code against official datasheets. Confirm RoHS compliance status via the specific product page or certificate. Ensure the TO-247-3 package matches design requirements. Validate that the part number suffix corresponds to the intended packaging format before finalizing orders.
Select this component when balancing conduction and switching losses is critical for efficiency. The 5 μs short-circuit capability provides robust protection in fault conditions. Consider the positive temperature coefficient for parallel configurations requiring uniform current sharing without complex compensation circuits.
This device belongs to the STMicroelectronics H series IGBT family. It shares the trench gate field-stop technology with other models like the STG25H120F2D7 die variant. The series focuses on achieving optimal performance for high-speed applications while maintaining low thermal resistance.
Direct substitutes are not explicitly listed in the provided documentation. Evaluate alternatives based on matching 1200 V rating, 25 A current, and TO-247-3 package. Verify equivalent switching speeds and short-circuit withstand times for functional compatibility.