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Product Detailed Parameters
- Description：IGBT 1200V 60A TO-247-3
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：3.85V @ 15V, 20A
- Power - Max：220 W
- Switching Energy：2.4mJ (on), 4.3mJ (off)
- Input Type：Standard
- Gate Charge：105 nC
- Td (on/off) @ 25°C：36ns/251ns
- Test Condition：960V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：84 ns
- Operating Temperature：-55°C ~ 125°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
Download product information
Overview
The STGW30N120KD is a 1200 V N-channel Insulated Gate Bipolar Transistor (IGBT) from STMicroelectronics. It belongs to the KD series, which is engineered to minimize power consumption in motor control circuits by reducing both conduction and switching losses. This component is designed for high-efficiency applications, offering low on-state voltage drop and optimized switching characteristics suitable for demanding industrial and consumer electronics environments.
Feature Summary
- Optimized for minimal conduction and switching energy losses
- Designed for high-frequency motor control applications
- Suitable for soft-switching topologies
Applications
- Motor control circuits for household appliances
- Heating, Ventilation, and Air Conditioning (HVAC) systems
- Industrial machine tools and drives
Procurement Notes
Verify the specific suffix 'KD' against the manufacturer's current datasheet to confirm active status and exact electrical parameters. Ensure compatibility with gate drive requirements for IGBTs. Check for any recent product change notifications or end-of-life notices directly from STMicroelectronics before finalizing procurement plans.
Selection Notes
Select this component when designing circuits that require reduced thermal dissipation in motor drives. The KD suffix indicates a specific trade-off between switching speed and conduction loss compared to other series. Confirm that the 1200 V rating exceeds the maximum bus voltage in the target application to ensure adequate safety margins.
Part Context
This part is part of STMicroelectronics' advanced IGBT family utilizing patented strip layout technology. It complements other high-voltage power devices like the STGW40N120KD and the high-frequency STGW30NC120HD. The KD series specifically targets efficiency improvements in residential and industrial power conversion systems.
Replacement Considerations
Direct replacements may include the STGW40N120KD for higher current capacity or the STGW30NC120HD for faster switching speeds. Verify pinout compatibility and thermal resistance values when substituting. Consult official cross-reference lists for qualified alternatives.
