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Product Detailed Parameters
- Description：IGBT 1200V 60A TO-247-3
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.75V @ 15V, 20A
- Power - Max：220 W
- Switching Energy：1.66mJ (on), 4.44mJ (off)
- Input Type：Standard
- Gate Charge：110 nC
- Td (on/off) @ 25°C：29ns/275ns
- Test Condition：960V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：152 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
Download product information
Overview
The STGW30NC120HD is an N-channel PowerMESH IGBT rated for a collector-emitter voltage of 1200V and a continuous collector current of 30A at 100°C. It utilizes a patented strip layout to achieve high switching performance with reduced fall time while maintaining low on-state voltage drop. The device features a TO-247 package with a thermal resistance junction-to-case of 0.57 °C/W. It operates within a junction temperature range of -55°C to 150°C, supporting a maximum total dissipation of 220W at 25°C case temperature.
Feature Summary
- Optimized for high-frequency applications through reduced current fall time
- Low on-voltage drop characteristics for minimized conduction losses
- High input impedance enabling voltage-driven gate control
- Suitable for soft-switching circuit topologies
Applications
- Induction heating systems
Procurement Notes
Verify the specific datasheet revision against the manufacturer's official records before finalizing component selection. Confirm that the TO-247 tube packaging aligns with assembly requirements. Ensure all electrical ratings match the target operating conditions to prevent overstress during deployment.
Selection Notes
Evaluate the thermal resistance parameters to ensure adequate heat sinking for the intended power dissipation levels. Consider the gate charge specifications when designing the driver circuitry to optimize switching speed and minimize drive losses. Verify compatibility with the required operating temperature range for the specific application environment.
Part Context
This component belongs to the PowerMESH family of IGBTs developed by STMicroelectronics. The 'H' suffix designates devices optimized for high-frequency operation, balancing fast switching speeds with low conduction losses. This family leverages advanced trench-gate field-stop technology for improved performance in medium-power industrial applications.
Replacement Considerations
Direct substitutes include other STMicroelectronics PowerMESH IGBTs from the same series, such as the STGW30NC60KD or STGW30NC120KD, provided they meet the voltage and current requirements. Cross-manufacturer replacements require careful verification of pinout compatibility, thermal characteristics, and switching energy parameters.
